參數(shù)資料
型號(hào)： IRF7306PBF
廠商： International Rectifier
英文描述： HEXFET㈢Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁(yè)數(shù)： 7/20頁(yè)
文件大?。?/td> 334K
代理商： IRF7306PBF
TPS77901, TPS77918, TPS77925, TPS77930
250-mA LDO REGULATOR WITH INTEGRATED RESET IN A MSOP8 PACKAGE
SLVS283A – MARCH 2000 – REVISED MARCH 2000
7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating junction temperature range (T
J
= –40
°
C to
125
°
C), V
I
= V
O(typ)
+ 1 V, I
O
= 1 mA, EN = 5 V, C
O
= 10
μ
F (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
I(RESET) = 300
μ
A
VO decreasing
Measured at VO
VI = 2.7 V,
V(RESET) = 5 V
MIN
TYP
1.1
MAX
UNIT
V
Minimum input voltage for valid RESET
Trip threshold voltage
92
98
%VO
%VO
V
μ
A
ms
Reset
Hysteresis voltage
0.5
Output low voltage
I(RESET) = 1 mA
0.15
0.4
Leakage current
1
RESET time-out delay
220
VDO
Dropout voltage (see Note 5)
3 V Output
IO = 250 mA,
IO = 250 mA
TJ = 25
°
C
250
mV
475
NOTE 5: IN voltage equals VO(Typ) – 100 mV; 1.8 V, and 2.5 V dropout voltage limited by input voltage range limitations (i.e., 3.3 V input voltage
needs to drop to 3.2 V for purpose of this test).
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
2, 3
VO
Output voltage
vs Output current
vs Junction temperature
4, 5
Ground current
vs Junction temperature
6
Power supply rejection ratio
vs Frequency
7
Output spectral noise density
vs Frequency
8
Zo
Output impedance
vs Frequency
9
VDO
Dropout voltage
vs Input voltage
10
vs Junction temperature
11
Line transient response
12, 14
Load transient response
13, 15
Output voltage
vs Time
16
Equivalent series resistance (ESR)
vs Output current
18 – 21
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7306QPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7306QPBF_10 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPOWERMOSFET
IRF7306QTRPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7306TR 功能描述:MOSFET 2P-CH 30V 3.6A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
IRF7306TRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 3.6A 8-Pin SOIC T/R
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