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參數(shù)資料
| 型號： | IRF7306PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數(shù)： | 5/20頁 |
| 文件大?。?/td> | 334K |
| 代理商： | IRF7306PBF |
TPS77901, TPS77918, TPS77925, TPS77930
250-mA LDO REGULATOR WITH INTEGRATED RESET IN A MSOP8 PACKAGE
SLVS283A – MARCH 2000 – REVISED MARCH 2000
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating junction temperature range
(unless otherwise noted)
Input voltage range
, V
I
Voltage range at EN
Maximum RESET voltage
Peak output current
Continuous total power dissipation
Output voltage, V
O
(OUT, FB)
Operating virtual junction temperature range, T
J
Storage temperature range, T
stg
ESD rating, HBM
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–0.3 V to 13.5 V
–0.3 V to 16.5 V
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16.5 V
Internally limited
See Dissipation Rating Table
5.5 V
–40
°
C to 125
°
C
–65
°
C to 150
°
C
2 kV
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network terminal ground.
DISSIPATION RATING TABLE – FREE-AIR TEMPERATURES
θ
JA
(
°
C/W)
(
°
C/W)
POWER RATING
PACKAGE
AIR FLOW
(CFM)
θ
JC
TA < 25
°
C
DERATING FACTOR
ABOVE TA = 25
°
C
3.76 mW/
°
C
3.92 mW/
°
C
4.12 mW/
°
C
TA = 70
°
C
POWER RATING
TA = 85
°
C
POWER RATING
0
266.2
3.84
376 mW
207 mW
150 mW
DGK
150
255.2
3.92
392 mW
216 mW
157 mW
250
242.8
4.21
412 mW
227 mW
165 mW
recommended operating conditions
MIN
MAX
UNIT
Input voltage, VI
§
Output voltage range, VO
Output current, IO (see Note 1)
Operating virtual junction temperature, TJ (see Note 1)
§ To calculate the minimum input voltage for your maximum output current, use the following equation: VI(min) = VO(max) + VDO(max load).
NOTE 1: Continuous current and operating junction temperature are limited by internal protection circuitry, but it is not recommended that the
device operate under conditions beyond those specified in this table for extended periods of time.
2.7
10
V
1.5
5.5
V
0
250
mA
°
C
–40
125
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| IRF7306QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7306QPBF_10 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPOWERMOSFET |
| IRF7306QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7306TR | 功能描述:MOSFET 2P-CH 30V 3.6A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF7306TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 3.6A 8-Pin SOIC T/R |
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