參數(shù)資料
型號(hào)： IRF7306PBF
廠商： International Rectifier
英文描述： HEXFET㈢Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁(yè)數(shù)： 17/20頁(yè)
文件大?。?/td> 334K
代理商： IRF7306PBF
TPS77901, TPS77918, TPS77925, TPS77930
250-mA LDO REGULATOR WITH INTEGRATED RESET IN A MSOP8 PACKAGE
SLVS283A – MARCH 2000 – REVISED MARCH 2000
17
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
programming the TPS77901 adjustable LDO regulator
The output voltage of the TPS77901 adjustable regulator is programmed using an external resistor divider as
shown in Figure 24. The output voltage is calculated using:
VO
Vref
1
R1
R2
(1)
Where:
V
ref
= 1.1834 V typ (the internal reference voltage)
Resistors R1 and R2 should be chosen for approximately 7-
μ
A divider current. Lower value resistors can be
used but offer no inherent advantage and waste more power. Higher values should be avoided as leakage
currents at FB increase the output voltage error. The recommended design procedure is to choose
R2 = 30.1 k
to set the divider current at 7
μ
A and then calculate R1 using:
R1
VO
Vref
1
R2
(2)
OUTPUT
VOLTAGE
2.5 V
3.3 V
3.6 V
R1
R2
UNIT
174
287
324
169
169
169
k
k
k
OUTPUT VOLTAGE
PROGRAMMING GUIDE
VO
VI
RESET
OUT
FB/SENSE
GND
R1
R2
EN
IN
TPS77x01
RESET Output
0.1
μ
F
250 k
CO
NOTE: To reduce noise and prevent
oscillation, R1 and R2 need to be as close
as possible to the FB/SENSE terminal.
Figure 24. TPS77901 Adjustable LDO Regulator Programming
regulator protection
The TPS779xx PMOS-pass transistor has a built-in back diode that conducts reverse currents when the input
voltage drops below the output voltage (e.g., during power down). Current is conducted from the output to the
input and is not internally limited. When extended reverse voltage is anticipated, external limiting may be
appropriate.
The TPS779xx also features internal current limiting and thermal protection. During normal operation, the
TPS779xx limits output current to approximately 0.9 A. When current limiting engages, the output voltage scales
back linearly until the overcurrent condition ends. While current limiting is designed to prevent gross device
failure, care should be taken not to exceed the power dissipation ratings of the package. If the temperature of
the device exceeds 150
°
C(typ), thermal-protection circuitry shuts it down. Once the device has cooled below
130
°
C(typ), regulator operation resumes.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7306QPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7306QPBF_10 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPOWERMOSFET
IRF7306QTRPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7306TR 功能描述:MOSFET 2P-CH 30V 3.6A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
IRF7306TRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 3.6A 8-Pin SOIC T/R
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