參數(shù)資料
型號： IRF7306PBF
廠商： International Rectifier
英文描述： HEXFET㈢Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁數(shù)： 13/20頁
文件大?。?/td> 334K
代理商： IRF7306PBF
TPS77901, TPS77918, TPS77925, TPS77930
250-mA LDO REGULATOR WITH INTEGRATED RESET IN A MSOP8 PACKAGE
SLVS283A – MARCH 2000 – REVISED MARCH 2000
13
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 18
0.1
0
50
100
150
200
250
TYPICAL REGION OF STABILITY
EQUIVALENT SERIES RESISTANCE
vs
OUTPUT CURRENT
10
IO – Output Current – mA
E
1
VO = 3.0 V
CO = 1
μ
F
VI = 4.3 V
TJ = 25
°
C
Region of Stability
Region of Instability
Region of Instability
Figure 19
0.1
0
50
100
150
200
250
TYPICAL REGION OF STABILITY
EQUIVALENT SERIES RESISTANCE
vs
OUTPUT CURRENT
10
IO – Output Current – mA
E
1
Region of Stability
Region of Instability
Region of Instability
VO = 3.0 V
CO = 10
μ
F
VI = 4.3 V
TJ = 25
°
C
0.01
Figure 20
0.1
0
50
100
150
200
250
TYPICAL REGION OF STABILITY
EQUIVALENT SERIES RESISTANCE
vs
OUTPUT CURRENT
10
IO – Output Current – mA
E
1
VO = 3.0 V
CO = 1
μ
F
VI = 4.3 V
TJ = 125
°
C
Region of Stability
Region of Instability
Region of Instability
Figure 21
0.1
0
50
100
150
200
250
TYPICAL REGION OF STABILITY
EQUIVALENT SERIES RESISTANCE
vs
OUTPUT CURRENT
10
IO – Output Current – mA
E
1
Region of Stability
Region of Instability
0.01
Region of Instability
VO = 3.0 V
CO = 10
μ
F
VI = 4.3 V
TJ = 125
°
C
Equivalent series resistance (ESR) refers to the total series resistance, including the ESR of the capacitor, any series resistance added
externally, and PWB trace resistance to CO.
相關PDF資料
PDF描述
IRF7306QPBF HEXFET Power MOSFET
IRF7307PBF HEXFET POWER MOSFET
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IRF7309QPBF HEXFET Power MOSFET
IRF730S HEXFET POWER MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
IRF7306QPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7306QPBF_10 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPOWERMOSFET
IRF7306QTRPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7306TR 功能描述:MOSFET 2P-CH 30V 3.6A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 陣列 系列:HEXFET® 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
IRF7306TRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 3.6A 8-Pin SOIC T/R
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