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參數資料
| 型號： | IRF7306PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數： | 14/20頁 |
| 文件大小： | 334K |
| 代理商： | IRF7306PBF |
TPS77901, TPS77918, TPS77925, TPS77930
250-mA LDO REGULATOR WITH INTEGRATED RESET IN A MSOP8 PACKAGE
SLVS283A – MARCH 2000 – REVISED MARCH 2000
14
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
pin functions
enable (EN)
The EN terminal is an input which enables or shuts down the device. If EN is a logic low, the device will be in
shutdown mode. When EN goes to logic high, then the device will be enabled.
sense (SENSE)
The SENSE terminal of the fixed-output options must be connected to the regulator output, and the connection
should be as short as possible. Internally, SENSE connects to a high-impedance wide-bandwidth amplifier
through a resistor-divider network and noise pickup feeds through to the regulator output. It is essential to route
the SENSE connection in such a way to minimize/avoid noise pickup. Adding RC networks between the SENSE
terminal and V
O
to filter noise is not recommended because it can cause the regulator to oscillate.
feedback (FB)
FB is an input terminal used for the adjustable-output options and must be connected to an external feedback
resistor divider. The FB connection should be as short as possible. It is essential to route it in such a way to
minimize/avoid noise pickup. Adding RC networks between FB terminal and V
O
to filter noise is not
recommended because it can cause the regulator to oscillate.
reset (RESET)
The RESET terminal is an open drain, active low output that indicates the status of V
O
. When V
O
reaches 95%
of the regulated voltage, RESET will go to a low-impedance state after a 220-ms delay. RESET will go to a
high-impedance state when V
out
is below 95% of the regulated voltage. The open-drain output of the RESET
terminal requires a pullup resistor.
external capacitor requirements
An input capacitor is not usually required; however, a bypass capacitor (0.047
μ
F or larger) improves load
transient response and noise rejection if the TPS779xx is located more than a few inches from the power supply.
A higher-capacitance capacitor may be necessary if large (hundreds of milliamps) load transients with fast rise
times are anticipated.
Most low noise LDOs require an external capacitor to further reduce noise. This will impact the cost and board
space. The TPS779xx has a very low noise specification requirement without using any external component.
Like all low dropout regulators, the TPS779xx requires an output capacitor connected between OUT (output
of the LDO) and GND (signal ground) to stabilize the internal control loop. The minimum recommended
capacitance value is 1
μ
F provided the ESR meets the requirement in Figures 19 and 21. In addition, a low-ESR
capacitor can be used if the capacitance is at least 10
μ
F and the ESR meets the requirements in Figures 18
and 20. Solid tantalum electrolytic, aluminum electrolytic, and multilayer ceramic capacitors are all suitable,
provided they meet the requirements described previously.
Ceramic capacitors have different types of dielectric material with each exhibiting different temperature and
voltage variation. The most common types are X5R, X7R, Y5U, Z5U, and NPO. The NPO type ceramic type
capacitors are generally the most stable over temperature. However, the X5R and X7R are also relatively stable
over temperature (with the X7R being the more stable of the two) and are therefore acceptable to use. The Y5U
and Z5U types provide high capacitance in a small geometry, but exhibit large variations over temperature;
therefore, the Y5U and Z5U are not generally recommended for use on this LDO. Independent of which type
of capacitor is used, one must make certain that at the worst case condition the capacitance/ESR meets the
requirement specified in Figures 18 – 21.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7306QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7306QPBF_10 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPOWERMOSFET |
| IRF7306QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7306TR | 功能描述:MOSFET 2P-CH 30V 3.6A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 陣列 系列:HEXFET® 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF7306TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 30V 3.6A 8-Pin SOIC T/R |
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