參數資料
型號: IRF6641TR1PBF
廠商: International Rectifier
英文描述: DirectFET TM MOSFET
中文描述: 商標的DirectFET MOSFET的
文件頁數: 7/9頁
文件大?。?/td> 260K
代理商: IRF6641TR1PBF
www.irf.com
7
Fig 18.
for HEXFET Power MOSFETs
P.W.
Period
di/dt
Diodedv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Reverse
Body Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
!"#$
! %&'&&
&'&&)!'
#((
!"
#
DirectFET
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
Substrate and PCB Layout, MZ Outline
相關PDF資料
PDF描述
IRF6641TRPBF DirectFET TM Power MOSFET
IRF6644PBF DirectFET Power MOSFET
IRF6644TRPBF DirectFET Power MOSFET
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相關代理商/技術參數
參數描述
IRF6641TR1PBF 制造商:International Rectifier 功能描述:MOSFET
IRF6641TRPBF 功能描述:MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6641TRPBF_07 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET TM Power MOSFET
IRF6643TR1PBF 功能描述:MOSFET MOSFT 150V 35A 35mOhm 39nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6643TRPBF 功能描述:MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube