參數(shù)資料
型號： IRF6641TR1PBF
廠商： International Rectifier
英文描述： DirectFET TM MOSFET
中文描述： 商標(biāo)的DirectFET MOSFET的
文件頁數(shù)： 3/9頁
文件大?。?/td> 260K
代理商： IRF6641TR1PBF
www.irf.com
3
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple incontact with top (Drain) of part.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
θ
is measured at
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
Absolute Maximum Ratings
Parameter
Units
W
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Thermal Resistance
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
°C
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JC
R
θ
J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
°C/W
2.8
1.8
89
270
-40 to + 150
Max.
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
0.20
0.10
0.05
D = 0.50
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W)
τ
i (sec)
0.6784 0.001268
17.299 0.033387
17.566 0.508924
9.4701 11.19309
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
τ
i
/
Ri
Ci=
τ
i
/
Ri
τ
A
τ
A
τ
4
τ
4
R
4
R
4
相關(guān)PDF資料
PDF描述
IRF6641TRPBF DirectFET TM Power MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF6641TR1PBF 制造商:International Rectifier 功能描述:MOSFET
IRF6641TRPBF 功能描述:MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6641TRPBF_07 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET TM Power MOSFET
IRF6643TR1PBF 功能描述:MOSFET MOSFT 150V 35A 35mOhm 39nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6643TRPBF 功能描述:MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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