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參數(shù)資料
| 型號： | IRF6641TR1PBF |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET TM MOSFET |
| 中文描述： | 商標(biāo)的DirectFET MOSFET的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 260K |
| 代理商： | IRF6641TR1PBF |
www.irf.com
1
10/02/06
DirectFET
Power MOSFET
DirectFET
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
Fig 1.
Typical On-Resistance vs. Gate Voltage
Description
The IRF6641PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging
to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V-
75V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance
enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal
for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.77mH, R
G
= 25
, I
AS
= 11A.
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
IRF6641TRPbF
RoHS Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
4
6
8
10
12
14
16
VGS,
Gate -to -Source Voltage (V)
0
20
40
60
80
100
120
140
160
180
200
RD
)
ID = 5.5A
TJ = 25°C
TJ = 125°C
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VG
VDS= 160V
VDS= 100V
VDS= 40V
ID= 5.5A
MZ
MN
V
DSS
200V max ±20V max
Q
g tot
34nC
V
GS
R
DS(on)
51m
@ 10V
V
gs(th)
4.0V
Q
gd
9.5nC
Units
V
A
mJ
A
46
11
Max.
200
3.7
26
37
±20
4.6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6641TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6641TRPBF | 功能描述:MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6641TRPBF_07 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET TM Power MOSFET |
| IRF6643TR1PBF | 功能描述:MOSFET MOSFT 150V 35A 35mOhm 39nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6643TRPBF | 功能描述:MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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