參數(shù)資料
型號(hào)： IRF6623
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/8頁
文件大?。?/td> 170K
代理商： IRF6623
2
www.irf.com
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.61mH,
R
G
= 25
, I
AS
= 12A.
Pulse width
≤
400μs; duty cycle
≤
2%.
Surface mounted on 1 in. square Cu board.
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermal couple mounted to top (Drain) of
part.
R
θ
is measured at
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
20
–––
–––
–––
1.55
–––
–––
–––
–––
–––
34
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
15
4.4
7.5
–––
-5.4
–––
–––
–––
–––
–––
11
3.3
1.2
4.0
2.5
5.2
8.9
9.7
40
12
4.5
1360
630
240
Max. Units
–––
–––
5.7
9.7
2.45
–––
1.0
150
100
-100
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
BV
DSS
Β
V
DSS
/
T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
mV/°C
m
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
See Fig. 17
nC
ns
pF
Diode Characteristics
Parameter
Continuous Source Current
Min.
–––
Typ.
–––
Max. Units
2.6
I
S
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
A
I
SM
–––
–––
120
V
SD
t
rr
Q
rr
–––
–––
–––
0.81
20
12
1.0
30
18
V
ns
nC
I
D
= 12A
V
GS
= 0V
V
DS
= 10V
= 1.0MHz
I
D
= 12A
Clamped Inductive Load
T
J
= 25°C, I
F
= 12A
di/dt = 100A/μs
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 12A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 12A
V
GS
= 4.5V
MOSFET symbol
Conditions
V
DS
= 10V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
V
DS
= 10V
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