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參數資料
| 型號： | IRF6635 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 247K |
| 代理商： | IRF6635 |
Power MOSFET
d
Typical values (unless otherwise specified)
V
DSS
V
GS
R
DS(on)
30V max
±20V max
1.3m
@ 10V
Q
g tot
Q
gd
Q
gs2
47nC
17nC
4.7nC
Description
The IRF6635 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6635 balances industry leading on-state resistance while minimizing gate charge along with ultra low package induc-
tance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high
efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6635 has
been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
h
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
h
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
k
I
DM
Pulsed Drain Current
e
E
AS
Single Pulse Avalanche Energy
f
I
AR
Avalanche Current
e
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
c
SQ
SX
ST
Fig 1.
Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
Fig 2.
Total Gate Charge vs. Gate-to-Source Voltage
z
RoHs compliant containing no lead or bromide
c
z
Low Profile (<0.7 mm)
z
Dual Sided Cooling Compatible
c
z
Ultra Low Package Inductance
z
Optimized for High Frequency Switching
c
z
Ideal for CPU Core DC-DC Converters
z
Optimized for for SyncFET socket of Sync. Buck Converter
c
z
Low Conduction and Switching Losses
z
Compatible with existing Surface Mount Techniques
c
c
Click on this section to link to the appropriate technical paper.
d
Click on this section to link to the DirectFET MOSFETs.
e
Repetitive rating; pulse width limited by max. junction temperature.
f
Starting T
J
= 25°C, L = 0.63mH, R
G
= 25
, I
AS
= 25A.
h
Surface mounted on 1 in. square Cu board, steady state.
k
T
C
measured with thermocouple mounted to top (Drain) of part.
MQ
MX
MT
DirectFET
ISOMETRIC
MX
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VG
VDS= 24V
VDS= 15V
ID= 25A
Units
V
A
mJ
A
Max.
30
25
180
250
200
25
±20
32
R
DS(on)
1.8m
@ 4.5V
Q
oss
V
gs(th)
29nC
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
0
2
4
6
8
10
TD
)
ID = 32A
TJ = 25°C
TJ = 125°C
Q
rr
48nC
1.8V
PD - 96981B
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF6635PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6635TR1 | 功能描述:MOSFET N-CH 30V 32A DIRECTFET RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF6635TR1PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6635TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6635TRPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET DIRECTFET MX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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