參數資料
型號： IRF6623
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數： 1/8頁
文件大?。?/td> 170K
代理商： IRF6623
www.irf.com
1
4/1/04
IRF6623
HEXFET Power MOSFET
R
DS(on)
max
5.7m
@V
GS
= 10V
9.7m
@V
GS
= 4.5V
Notes
through are on page 2
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with Existing Surface Mount Techniques
Description
The IRF6623 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-
turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, IMPROVING previous best thermal resistance by 80%.
The IRF6623 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6623 has been optimized for parameters that are
critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in
the control FET socke
t.
V
DSS
20V
Qg(typ.)
11nC
DirectFET
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
E
AS
I
AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Linear Derating Factor
Operating Junction and
Storage Temperature Range
A
W
mJ
A
W/°C
°C
T
J
T
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.0
–––
Units
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JC
R
θ
J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
°C/W
Max.
20
16
13
120
2.1
1.4
42
43
12
±20
55
-40 to + 150
0.017
相關PDF資料
PDF描述
IRF6628PBF DirectFET Power MOSFET
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相關代理商/技術參數
參數描述
IRF6623TR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 16A 7-Pin Direct-FET ST T/R
IRF6623TR1 功能描述:MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6623TR1PBF 功能描述:MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6623TR1PBF 制造商:International Rectifier 功能描述:MOSFET
IRF6623TRPBF 功能描述:MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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