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參數(shù)資料
| 型號： | IRF6628TRPBF |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 265K |
| 代理商： | IRF6628TRPBF |
www.irf.com
1
07/11/06
IRF6628PbF
IRF6628TRPbF
DirectFET
Power MOSFET
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
Description
The IRF6628PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.16mH, R
G
= 25
, I
AS
= 22A.
DirectFET
ISOMETRIC
MQ
MX
MT
MP
0
10
20
30
40
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VG
VDS= 20V
VDS= 13V
VDS= 5.0V
ID= 22A
V
DSS
25V max
Q
g tot
31nC
V
GS
R
DS(on)
1.9m
@ 10V
Q
gs2
4.1nC
R
DS(on)
2.5m
@ 4.5V
Q
oss
V
gs(th)
21nC
±20V max
Q
gd
12nC
Q
rr
26nC
1.9V
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
A
mJ
A
22
Max.
25
22
160
220
38
±20
27
RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
3
4
5
6
7
8
9
10
11
VGS, Gate -to -Source Voltage (V)
0
2
4
6
8
10
T(
)
ID = 27A
TJ = 25°C
TJ = 125°C
The IRF6628PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6628PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6628PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications
.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6629PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6629TR1PBF | 功能描述:MOSFET 25V 1 N-CH HEXFET 2.1mOhms 34nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6629TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6629TRPBF | 功能描述:MOSFET 25V 1 N-CH HEXFET 2.1mOhms 34nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6631 | 制造商:International Rectifier 功能描述:MOSFET N-Ch 30V 13A Direct-FET SQ |
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