參數(shù)資料
型號: IRF6619
廠商: International Rectifier
英文描述: DirectFET Power MOSFET
中文描述: DirectFET功率MOSFET
文件頁數(shù): 4/9頁
文件大?。?/td> 292K
代理商: IRF6619
4
www.irf.com
Fig 5.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
Fig 6.
Typical Transfer Characteristics
Fig 7.
Normalized On-Resistance vs. Temperature
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance Vs.
Drain Current and Gate Voltage
0.1
1
10
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID
60μs PULSE WIDTH
Tj = 25°C
2.5V
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
TOP
BOTTOM
0.1
1
10
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID
60μs PULSE WIDTH
Tj = 150°C
2.5V
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
TOP
BOTTOM
1.5
2.0
2.5
3.0
3.5
4.0
VGS, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
ID
(
)
VDS = 10V
60μs PULSE WIDTH
TJ = 150°C
TJ = 25°C
TJ = -40°C
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
T
ID = 30A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
40
80
120
160
200
ID, Drain Current (A)
1
2
3
4
5
6
7
8
9
10
TD
TA= 25°C
VGS = 3.0V
VGS = 3.5V
VGS = 4.0V
VGS = 4.5V
VGS = 5.0V
VGS = 10V
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