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參數(shù)資料
| 型號(hào)： | IRF6619 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 292K |
| 代理商： | IRF6619 |
www.irf.com
1
2/10/05
IRF6619
DirectFETDescription
The IRF6619 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6619 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6619 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619 offers particularly low Rds(on) and high
Cdv/dt immunity for synchronous FET applications
.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(
Package Limited
)
I
DM
Pulsed Drain Current
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
DirectFET
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
Fig 1.
Typical On-Resistance Vs. Gate Voltage
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching above 1MHz
Ideal for CPU Core DC-DC Converters
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction Losses
Compatible with existing Surface Mount Techniques
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.86mH, R
G
= 25
, I
AS
=
24A, V
GS
=10V. Part not recommended for use above this value.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
MQ
MX
MT
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
38nC
13nC
3.5nC
18nC
22nC
2.0V
0
20
40
60
80
100
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VG
VDS= 16V
VDS= 10V
ID= 16A
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
1.0
2.0
3.0
4.0
5.0
6.0
T
)
TJ = 25°C
TJ = 125°C
ID = 30A
Units
V
A
mJ
A
mJ
Max.
20
24
150
240
240
±20
30
See Fig. 14, 15, 17a, 17b,
V
DSS
V
GS
R
DS(on)
R
DS(on)
20V max
±20V max 1.65m
@ 10V 2.2m
@ 4.5V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF6623 | HEXFET Power MOSFET |
| IRF6628PBF | DirectFET Power MOSFET |
| IRF6628TRPBF | DirectFET Power MOSFET |
| IRF6633 | DirectFET Power MOSFET |
| IRF6635 | DirectFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6619 | 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes |
| IRF6619PBF | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6619TR1 | 功能描述:MOSFET 20V 1 N-CH 1.65mOhm DirectFET 2.0V VGS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6619TR1PBF | 功能描述:MOSFET 20V 1 N-CH 1.65mOhm DirectFET 2.0V VGS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6619TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
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