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參數(shù)資料
| 型號： | IRF3711ZCL |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 284K |
| 代理商： | IRF3711ZCL |
8
www.irf.com
Control FET
!" # $
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#
#'
P
loss
= P
conduction
+ P
switching
+ P
drive
+ P
output
This can be expanded and approximated by;
(
)
P
loss
=
I
rms
2
×
R
ds(on)
+
I
×
Q
gd
(
i
g
×
V
in
×
f
+
I
×
Q
gs2
i
g
×
V
in
×
f
+
Q
g
×
V
g
×
f
)
+
Q
oss
2
×
V
in
×
f
"(
%&
!"
%& !"
"
)
#
*
%+
%& !"#
# ,
-
./
#
#
#
Synchronous FET
The power loss equation for Q2 is approximated
by;
P
loss
=
P
conduction
+
P
drive
+
P
output
(
+
Q
g
×
V
g
×
f
(
Q
oss
2
*
P
loss
=
I
rms
2
×
R
ds(on)
)
+
×
V
in
×
f
+
Q
rr
×
V
in
×
f
(
)
*dissipated primarily in Q1.
For the synchronous MOSFET Q2, R
is an im-
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Q
and re-
verse recovery charge Q
both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and V
. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Q
/Q
must be minimized to reduce the
potential for Cdv/dt turn on.
Power MOSFET Selection for Non-Isolated DC/DC Converters
Figure A: Q
oss
Characteristic
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF3711ZCLPBF | 功能描述:MOSFET N-CH 20V 92A TO-262 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF3711ZCS | 功能描述:MOSFET N-CH 20V 92A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF3711ZCSHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 20V 92A 3PIN D2PAK - Bulk |
| IRF3711ZCSPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF3711ZCSTRL | 功能描述:MOSFET N-CH 20V 92A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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