參數(shù)資料
型號(hào)： HYB18L128160BF
廠商： QIMONDA
英文描述： DRAMs for Mobile Applications 128-Mbit Mobile-RAM
中文描述： 針對(duì)移動(dòng)應(yīng)用的DRAM 128 - Mbit的移動(dòng)RAM
文件頁(yè)數(shù)： 49/55頁(yè)
文件大小： 1399K
代理商： HYB18L128160BF
Data Sheet
49
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Electrical CharacteristicsPull-up and Pull-down Characteristics
3.4
Pull-up and Pull-down Characteristics
The above characteristics are specified under nominal process variation / condition
Temperature (T
j
): Nominal = 50
°
C, V
DDQ
: Nominal = 1.80 V
Table 23
Parameter & Test Conditions
Self Refresh Currents
1)2)
1) 0
°
C
≤
T
C
≤
70
°
C (comm.); -25
°
C
≤
T
C
≤
85
°
C (ext.); V
DD
= V
DDQ
= 1.70V to 1.95V
2) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual
temperature with a much finer resolution than supported by the 4 distinct temperature levels as defined by JEDEC for
TCSR. At production test the sensor is calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained
from device characterization.
Max.
Temperature
Symbol
Values
Unit
typ.
max.
Self Refresh Current:
Self refresh mode,
full array activation
(PASR = 000)
85
°
C
70
°
C
45
°
C
25 °C
85
°
C
70
°
C
45 °C
25
°
C
85
°
C
70
°
C
45
°
C
25 °C
I
DD6
400
285
200
180
340
250
185
170
310
240
175
165
470
—
—
—
400
—
—
—
360
—
—
—
μ
A
Self Refresh Current:
Self refresh mode,
half array activation
(PASR = 001)
Self Refresh Current:
Self refresh mode,
quarter array activation
(PASR = 010)
Table 24
Voltage
(V)
Half Drive Strength and Full Drive Strength
Half Drive Strength
Pull-Down Current
(mA)
Nominal
Low
High
0.0
0.0
15.1
20.5
20.3
28.5
22.0
32.0
22.6
33.5
23.5
35.0
23.6
35.3
23.8
35.5
23.9
35.7
24.0
35.9
Full Drive Strength
Pull-Down Current
(mA)
Nominal
Low
0.0
30.2
40.5
43.9
45.2
46.9
47.2
47.5
47.7
48.0
Pull-Up Current (mA)
Pull-Up Current (mA)
Nominal
Nominal
Low
-19.7
-18.8
-18.2
-17.6
-16.7
-9.4
-6.6
-1.8
3.8
9.8
Nominal
High
-33.4
-32.0
-31.0
-29.9
-28.7
-20.4
-17.1
-11.4
-4.8
2.5
Nominal
High
0.0
41.0
57.0
64.0
67.0
70.0
70.5
71.0
71.4
71.8
Nominal
Low
-39.3
-37.6
-36.4
-35.1
-33.3
-18.8
-13.2
-3.5
7.5
19.6
Nominal
High
-66.7
-63.9
-61.9
-59.8
-57.3
-40.7
-34.1
-22.7
-9.6
5.0
0.00
0.40
0.65
0.85
1.00
1.40
1.50
1.65
1.80
1.95
相關(guān)PDF資料
PDF描述
HYB18L256160B DRAMs for Mobile Applications 256-Mbit Mobile-RAM
HYMP112S64LMP8-C4 DDR2 SDRAM SO-DIMM
HYMP112S64LMP8-C5 DDR2 SDRAM SO-DIMM
HYMP112S64LMP8-E3 BNC FEMALE TO RCA MALE COUPLER
HYMP112S64LMP8-E4 DDR2 SDRAM SO-DIMM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18L128160BF-7.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
HYB18L128160BF-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications
HYB18L256160B 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM
HYB18L256160BC-7.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
HYB18L256160BC-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*