參數(shù)資料
型號(hào)： HYB18L128160BF
廠商： QIMONDA
英文描述： DRAMs for Mobile Applications 128-Mbit Mobile-RAM
中文描述： 針對(duì)移動(dòng)應(yīng)用的DRAM 128 - Mbit的移動(dòng)RAM
文件頁(yè)數(shù)： 25/55頁(yè)
文件大?。?/td> 1399K
代理商： HYB18L128160BF
Data Sheet
25
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionCommands
prior to the WRITE command, as shown in
Figure 21
. With the registration of the WRITE command, DQM acts as
a write mask: when asserted HIGH, input data will be masked and no write will be performed.
Figure 21
READ to WRITE Timing
2.4.5.5
READ to PRECHARGE
A READ burst may be followed by, or truncated with a PRECHARGE command to the same bank, provided that
Auto Precharge was not activated. This is shown in
Figure 22
.
The PRECHARGE command should be issued x clock cycles before the clock edge at which the last desired data
element is valid, where x equals the CAS latency for READ bursts minus 1. Following the PRECHARGE
command, a subsequent ACTIVE command to the same bank cannot be issued until t
RP
is met. Please note that
part of the row precharge time is hidden during the access of the last data elements.
In the case of a READ being executed to completion, a PRECHARGE command issued at the optimum time (as
described above) provides the same operation that would result from the same READ burst with Auto Precharge
enabled. The disadvantage of the PRECHARGE command is that it requires that the command and address
busses be available at the appropriate time to issue the command. The advantage of the PRECHARGE command
is that it can be used to truncate bursts.
"A ! #OL N B
$/ N
$1- IS ASSERTED ()'( TO SET $1S TO (IGH : STATE FOR
BANK ! COLUMN N B
$ATA /UT FROM COLUMN N $) B
$ATA )N TO COLUMN B
CLOCK CYCLE PRIOR TO THE 72)4% COMMAND
$ONgT #ARE
#,+
#,
#,
#OMMAND
./0
2%!$
./0
./0
./0
./0
./0
72)4%
!DDRESS
"A !
#OL B
"A !
#OL N
$1-
$1
$/ N
$) B
$ ) B
$/ N
(IGH :
$) B
$1
$) B
$ ) B
$/ N
(IGH :
$) B
相關(guān)PDF資料
PDF描述
HYB18L256160B DRAMs for Mobile Applications 256-Mbit Mobile-RAM
HYMP112S64LMP8-C4 DDR2 SDRAM SO-DIMM
HYMP112S64LMP8-C5 DDR2 SDRAM SO-DIMM
HYMP112S64LMP8-E3 BNC FEMALE TO RCA MALE COUPLER
HYMP112S64LMP8-E4 DDR2 SDRAM SO-DIMM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18L128160BF-7.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
HYB18L128160BF-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications
HYB18L256160B 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM
HYB18L256160BC-7.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
HYB18L256160BC-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*