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| 型號： | HYB18L128160BF |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| 中文描述： | 針對移動(dòng)應(yīng)用的DRAM 128 - Mbit的移動(dòng)RAM |
| 文件頁數(shù)： | 32/55頁 |
| 文件大?。?/td> | 1399K |
| 代理商： | HYB18L128160BF |
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Data Sheet
32
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionCommands
2.4.6.3
WRITE - DQM Operation
DQM may be used to mask write data: when asserted HIGH, input data will be masked and no write will be
performed. The generic timing parameters as listed in
Table 12
also apply to this DQM operation. The write burst
in progress is not affected and will continue as programmed.
Figure 32
WRITE Burst - DQM Operation
2.4.6.4
WRITE to READ
A WRITE burst may be followed by, or truncated with a READ command. The READ command can be performed
to the same or a different (active) bank. With the registration of the READ command, data inputs will be ignored
and no WRITE will be performed, as shown in
Figure 33
.
Figure 33
WRITE to READ Timing
"A ! #OL N
$) N
"URST ,ENGTH
SUBSEQUENT ELEMENTS OF $ATA )N ARE PROVIDED IN THE PROGRAMMED ORDER FOLLOWING
$) N WITH THE FIRST ELEMENT $) N
BEING MASKED
$1- WRITE LATENCY IS
CLOCK CYCLES
"ANK ! #OLUMN N
$ATA )N TO COLUMN N
IN THE CASE SHOWN
$ONgT #ARE
#,+
#OMMAND
./0
./0
./0
./0
./0
72)4%
!DDRESS
"A !
#OL N
$1-
$1
$) N
$) N
$) N
"A ! #OL N B
$) N
$ATA )N TO COLUMN N $/ B
"URST ,ENGTH
SUBSEQUENT ELEMENTS OF $ATA )N /UT ARE PROVIDED IN THE PROGRAMMED ORDER FOLLOWING $) N $/ B
$) N
IS IGNORED DUE TO 2%!$ COMMAND .O $1- MASKING REQUIRED AT THIS POINT
BANK ! COLUMN N B
$ATA /UT FROM COLUMN B
IN THE CASE SHOWN
$ONgT #ARE
#,+
7RITE DATA
ARE IGNORED
#,
#,
#OMMAND
./0
2%!$
./0
./0
./0
./0
./0
72)4%
!DDRESS
"A !
#OL B
"A !
#OL N
$1
$/ B
$/ B
$ / B
$) N
$) N
$) N
(IGH :
$1
$/ B
$ ) B
$) N
$) N
$) N
(IGH :
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB18L256160B | DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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