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參數資料
| 型號： | HYB18L128160BF |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| 中文描述： | 針對移動應用的DRAM 128 - Mbit的移動RAM |
| 文件頁數： | 41/55頁 |
| 文件大?。?/td> | 1399K |
| 代理商： | HYB18L128160BF |
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Data Sheet
41
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionFunction Truth Tables
Figure 46
Power Down Entry and Exit
2.4.10.1
DEEP POWER DOWN
The deep power down mode is an unique function on Low Power SDRAM devices with extremely low current
consumption. Deep power down mode is entered using the BURST TERMINATE command (cf.
Figure 18
) except
that CKE is LOW. All internal voltage generators inside the device are stopped and all memory data is lost in this
mode. To enter the deep power down mode all banks must be precharged.
The deep power down mode is asynchronously exited by asserting CKE HIGH. After the exit, the same command
sequence as for power-up initialization, including the 200μs initial pause, has to be applied before any other
command may be issued (cf.
Figure 3
and
Figure 4
).
2.5
Function Truth Tables
Table 15
Current State
Any
Current State Bank n - Command to Bank n
CS
RAS CAS
H
X
X
L
H
H
L
L
H
L
L
L
L
L
L
L
L
H
L
H
L
L
H
L
L
L
H
WE
X
H
H
H
L
L
H
L
L
Command / Action
DESELECT (NOP / continue previous operation)
NO OPERATION (NOP / continue previous operation)
ACTIVE (select and activate row)
AUTO REFRESH
MODE REGISTER SET
PRECHARGE
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (deactivate row in bank or banks)
Notes
1)2)3)4)5)6)
to
Idle
to
to 7)
to
to , 8)
Row Active
to , 9)
to ,
to , 10)
$ONgT #ARE
0RECHARGE 0OWER $OWN MODE SHOWN ALL BANKS ARE IDLE AND T20 MET
WHEN 0OWER $OWN %NTRY #OMMAND IS ISSUED
!NY
#OMMAND
0OWER $OWN
%NTRY
T
20
%XIT FROM
0OWER $OWN
(IGH :
$1
!
!0
6ALID
0RE !LL
!DDRESS
6ALID
#OMMAND
./0
./0
./0
6ALID
02%
#+%
#,+
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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