參數(shù)資料
型號: HY5V52EMP-H
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
封裝: 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-90
文件頁數(shù): 5/14頁
文件大小: 172K
代理商: HY5V52EMP-H
Rev. 1.0 / Nov. 2005
13
1
Synchronous DRAM Memory 256Mbit (8Mx16bit *2stack)
HY5V52E(L)M(P) Series
COMMAND TRUTH TABLE
Command
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
ADDR
A10/AP
BA
Note
Mode Register Set
H
X
L
X
OP code
No Operation
H
X
HX
X
XX
LH
H
Bank Active
H
X
L
H
X
RA
V
Read
HX
L
H
L
H
X
CA
L
V
Read with Autoprecharge
H
Write
HX
L
H
L
X
CA
L
V
Write with Autoprecharge
H
Precharge All Banks
HX
L
H
L
X
HX
Precharge selected Bank
LV
Burst Stop
H
X
L
H
L
X
DQM
H
X
V
X
Auto Refresh
H
L
H
X
Burst-Read-Single-WRITE
H
X
L
LL
LX
A9 ball High
(Other balls OP code)
MRS
Mode
Self Refresh1
Entry
H
L
H
X
Exit
L
H
HX
X
LH
H
Precharge
power down
Entry
H
L
HX
X
LH
H
Exit
L
H
HX
X
LH
H
Clock
Suspend
Entry
H
L
HX
X
LV
V
Exit
L
H
X
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