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參數(shù)資料
| 型號： | HY5V52EMP-H |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 |
| 封裝： | 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-90 |
| 文件頁數(shù)： | 13/14頁 |
| 文件大?。?/td> | 172K |
| 代理商： | HY5V52EMP-H |
Rev. 1.0 / Nov. 2005
8
1
Synchronous DRAM Memory 256Mbit (8Mx16bit *2stack)
HY5V52E(L)M(P) Series
ABSOLUTE MAXIMUM RATING
DC OPERATING CONDITION
Note: 1. All voltages are referenced to VSS = 0V.
2. VIH Max is acceptable VDDQ + 2V for a pulse width with <= 3ns of duration.
3. VIL(min) is acceptable -2.0V for a pulse width with <= 3ns of duration.
AC OPERATING TEST CONDITION (TA= 0 to 70 oC, VDD=3.3±0.3V, VSS=0V)
Note: 1. See Next Page
Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
0 ~ 70
oC
Storage Temperature
TSTG
-55 ~ 125
oC
Voltage on Any Pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD
1
W
Soldering Temperature . Time
TSOLDER
260 . 10
oC . Sec
Parameter
Symbol
Min
Max
Unit
Note
Power Supply Voltage
VDD, VDDQ
3.0
3.6
V
1
Input High Voltage
VIH
2.0
VDDQ + 0.3
V
1, 2
Input Low Voltage
VIL
-0.3
0.8
V
1, 3
Parameter
Symbol
Value
Unit
Note
AC Input High / Low Level Voltage
VIH / VIL
2.4 / 0.4
V
Input Timing Measurement Reference Level Voltage
Vtrip
0.5 x VDDQ
V
Input Rise / Fall Time
tR / tF
1
ns
Output Timing Measurement Reference Level Voltage
Voutref
0.5 x VDDQ
V
Output Load Capacitance for Access Time Measurement
CL
30
pF
1
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