參數(shù)資料
型號(hào): HY5V52EMP-H
廠商: HYNIX SEMICONDUCTOR INC
元件分類(lèi): DRAM
英文描述: 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
封裝: 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-90
文件頁(yè)數(shù): 1/14頁(yè)
文件大?。?/td> 172K
代理商: HY5V52EMP-H
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 1.0 / Nov. 2005
1
256Mb Synchronous DRAM based on 2M x 4Bank x32 I/O
Document Title
4Bank x 2M x 32bits Synchronous DRAM
Revision History
Revision
No.
History
Draft Date
Remark
0.1
Initial Draft
Dec. 2004
Preliminary
0.2
Editorial change
Dec. 2004
Preliminary
0.3
1. Corrected Functional Block Diagram
2. Changed CI1 and CI2
Mar. 2005
Preliminary
1.0
1. Corrected Column Address (CA7 --> CA8)
2. Inserted CL=2 time spec. (Page11 & Page12)
3. Release : Final version
Nov. 2005
Final
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