- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄223992 > HY27US081G1MTPMP (HYNIX SEMICONDUCTOR INC) 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 PDF資料下載
參數(shù)資料
| 型號(hào)： | HY27US081G1MTPMP |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| 封裝： | 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 |
| 文件頁(yè)數(shù)： | 23/39頁(yè) |
| 文件大?。?/td> | 312K |
| 代理商： | HY27US081G1MTPMP |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)當(dāng)前第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)
Rev 0.2 / May. 2007
3
Preliminary
HY27US(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
SUPPLY VOLTAGE
- VCC = 2.7 to 3.6V : HY27USxx1G1M
Memory Cell Array
= (512+16) Bytes x 32 Pages x 8,192 Blocks
= (256+8) Words x 32 Pages x 8,192 Blocks
PAGE SIZE
- x8 device : (512 + 16 spare) Bytes
: HY27US081G1M
- x16 device : (256+ 8 spare) Words
: HY27US161G1M
BLOCK SIZE
- x8 device: (16K + 512 spare) Bytes
- x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
- Random access: 15us (max.)
- Sequential access: 50ns (min.)
- Page program time: 200us (typ.)
COPY BACK PROGRAM MODE
- Fast page copy without external buffering
FAST BLOCK ERASE
- Block erase time: 2ms (Typ.)
STATUS REGISTER
ELECTRONIC SIGNATURE
- 1st cycle : Manufacturer Code
- 2nd cycle : Device Code
- 3rd cycle: Internal chip number, Cell Type, Number of
Simultaneously Programmed Pages.
- 4th cycle: Page size, Block size, Organization, Spare
size
CHIP ENABLE DON’T CARE OPTION
- Simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support
- Automatic Memory Download
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions
DATA INTEGRITY
- 100,000 Program/Erase cycles (with 4bit/528byte ECC)
- 10 years Data Retention
PACKAGE
- HY27US(08/16)1G1M-T(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27US(08/16)1G1M-T (Lead)
- HY27US(08/16)1G1M-TP (Lead Free)
- HY27US081G1M-S(P)
: 48-Pin USOP1 (12 x 17 x 0.65 mm)
- HY27US081G1M-S (Lead)
- HY27US081G1M-SP (Lead Free)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5116100BJ-70 | 16M X 1 FAST PAGE DRAM, 70 ns, PDSO24 |
| HY5116804CSLT-80 | 2M X 8 EDO DRAM, 80 ns, PDSO28 |
| HY514400ALT-60 | 1M X 4 FAST PAGE DRAM, 60 ns, PDSO20 |
| HY51VS65173HGLT-5 | 4M X 16 EDO DRAM, 50 ns, PDSO50 |
| HY57V283220LT-7I | 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27US08281A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
| HY27US08282A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
| HY27US08561A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27US08561A-T (P) | 制造商:SK Hynix Inc 功能描述: |
| HY27US08561M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。