參數(shù)資料
型號(hào)： HY27UF081G2M-TMB
廠商： Hynix Semiconductor Inc.
英文描述： Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes
中文描述： 1Gbit的（128Mx8bit / 64Mx16bit）NAND閃存
文件頁(yè)數(shù)： 17/48頁(yè)
文件大?。?/td> 476K
代理商： HY27UF081G2M-TMB
Rev 0.7 / Apr. 2005
17
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Parameter
Symbol
Min
Typ
Max
Unit
Valid Block Number
N
VB
1004
1024
Blocks
Table 7: Valid Blocks Number
Symbol
Parameter
Value
Unit
1.8V
3.3V
T
A
Ambient Operating Temperature
(Commercial Temperature Range)
0 to 70
0 to 70
℃
Ambient Operating Temperature
(Extended Temperature Range)
-25 to 85
-25 to 85
℃
Ambient Operating Temperature
(Industrial Temperature Range)
-40 to 85
-40 to 85
℃
T
BIAS
Temperature Under Bias
-50 to 125
-50 to 125
℃
T
STG
Storage Temperature
-65 to 150
-65 to 150
℃
V
IO
(2)
Input or Output Voltage
-0.6 to 2.7
-0.6 to 4.6
V
Vcc
Supply Voltage
-0.6 to 2.7
-0.6 to 4.6
V
Table 8: Absolute maximum ratings
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
the device at these or any other conditions above those indicated in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
相關(guān)PDF資料
PDF描述
HY27UF081G2M-TMP 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TMS 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TPCB 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-VPIB 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27LF081G2M-VPIB 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27UF081G2M-TMP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TMS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TPCB 制造商:SK Hynix Inc 功能描述:IC FLASH NAND 1GB SMD TSOP48 制造商:SK Hynix Inc 功能描述:NAND Flash, 128M x 8, 48 Pin, Plastic, TSSOP
HY27UF081G2M-TPCP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TPCS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
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