參數(shù)資料
型號: HPMX-7201
英文描述: Upconverter(上變頻器)
中文描述: 變頻器(上變頻器)
文件頁數(shù): 4/19頁
文件大?。?/td> 163K
代理商: HPMX-7201
4
PCS CDMA Variable Gain Amplifier
Symbol
IccBat
Parameters and Test Conditions
Battery Current Consumption
[2]
Units
mA
mA
dB
dB
Min.
Typ.
28
100
-10
23
-59
17
20
Max.
35
110
-5
RfTxAgc = 0.3 V
RfTxAgc = 2.7 V
RfTxAgc = 0.3 V
RfTxAgc = 2.7 V
Pout = +11 dBm
RfTxAgc = 2.7 V
Gain
Gain
[2]
21
ACPR
P1dB
Adjacent Channel Power Ratio
1 dB compression point
Isolation between cdmaDrvOut1 and cdmaDrvOut2
with cdmaOut1 selected.
1930 to 1990 MHz Noise Floor
dBc/30 KHz
dBm
dB
-52
Rx Noise
RfTxAgc = 2.7 V
dBm/Hz
-142
Note 2:
The PCS CDMA VGA features adaptive biasing such that the supply current (from VccBat) will vary with RfTXAgc voltage.
Please see the
Typical Performance Graph
s for more information on the VGA operation.
Cellular AMPS Upconverter
Symbol
Icc
Parameters and Test Conditions
Current Consumption
Units
mA
Min.
Typ.
23
Max.
26
P
ampsMixOut
Z
IF
FMnoise
Output Power at Vin = 480mVp-p
[3]
dBm
dBm/Hz
-7
Differential Impedance of IF port
360
Rx band Noise
F
ampsMixOut
= 835 MHz, F
noise-test
= 880 MHz
LO port to RF port leakage
-145
dBm
-30
IF to LO Leakage
dBm
-89
RF to LO Leakage
dBm
-65
IR
Image Rejection
F
Image
= F
IF
+ F
LO
= 130 MHz + 965 MHz = 1095 MHz
dBc
30
Note 3:
This input level is calculated from the input power delivered to a test circuit with measured loss as specified in the
Standard Test Conditions
. If an additional resistance is added across the ifInP and ifInM pins (to set the IF filter terminat-
ing impedance) the input voltage for a fixed input power will be reduced. To maintain this input voltage in this case, the
input power to the IF port must be increased, resulting in an apparent decrease in power gain.
Cellular AMPS Driver
Symbol
Icc-bat
Parameters and Test Conditions
Battery Current consumption
Units
mA
Min.
Typ.
30
Max.
34
SSGain
Small Signal Gain, P
ampsDrvIn
= -25 dBm
Output Power at P
ampsDrvIn
= P
ampsMixOut
1dB Compression Point
dB
20
22
Psatout
dBm
10
11
P1dB
dBm
8
Noise
Rx band Noise, P
ampsDrvOut
= +11 dBm
F
ampsDrvOut
= 835 MHz, F
noise-test
= 880 MHz
dBm/Hz
-134
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