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參數(shù)資料
| 型號： | HM5212165F |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 128M LVTTL interface SDRAM(128M LVTTL 接口同步DRAM) |
| 中文描述： | 128M的LVTTL接口的SDRAM（128M的LVTTL接口同步的DRAM） |
| 文件頁數(shù)： | 16/63頁 |
| 文件大?。?/td> | 858K |
| 代理商： | HM5212165F |
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HM5212165F/HM5212805F-75/A60/B60
16
From READ with AUTO-PRECHARGE state, command operation
To [DESL], [NOP]:
These commands continue read operations until the burst operation is completed, and
the SDRAM then enters precharge mode.
To [ACTV]:
This command makes other banks bank active. (However, an interval of t
RRD
is required.)
Attempting to make the currently active bank active results in an illegal command.
From WRITE state, command operation
To [DESL], [NOP]:
These commands continue write operations until the burst operation is completed.
To [BST]:
This command stops a full-page burst.
To [READ], [READ A]:
These commands stop a burst and start a read cycle.
To [WRIT], [WRIT A]:
These commands stop a burst and start the next write cycle.
To [ACTV]:
This command makes the other bank active. (However, an interval of t
RRD
is required.)
Attempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]:
These commands stop burst write and the SDRAM then enters precharge mode.
From WRITE with AUTO-PRECHARGE state, command operation
To [DESL], [NOP]:
These commands continue write operations until the burst is completed, and the
SDRAM enters precharge mode.
To [ACTV]:
This command makes the other bank active. (However, an interval of t
RRD
is required.)
Attempting to make the currently active bank active results in an illegal command.
From REFRESH state, command operation
To [DESL], [NOP], [BST]:
After an auto-refresh cycle (after t
RC
), the SDRAM automatically enters the
IDLE state.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM5225165BTT-75 | 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM |
| HM5225805BLTT-A6 | 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM |
| HM5225405B-B6 | 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM |
| HM5225405BLTT-75 | POT 20K OHM 9MM HORZ NO BUSHING |
| HM5225405BLTT-A6 | POT 5K OHM 9MM HORZ NO BUSHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM5212165FLTD-75 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword X 16-bit X 4-bank/4-Mword X 8-bit X 4-bank PC/133, PC/100 SDRAM |
| HM5212165FLTD-A60 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword X 16-bit X 4-bank/4-Mword X 8-bit X 4-bank PC/133, PC/100 SDRAM |
| HM5212165FLTD-B60 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword X 16-bit X 4-bank/4-Mword X 8-bit X 4-bank PC/133, PC/100 SDRAM |
| HM5212165FTD-75 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword X 16-bit X 4-bank/4-Mword X 8-bit X 4-bank PC/133, PC/100 SDRAM |
| HM5212165FTD-A60 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword × 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM |
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