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參數(shù)資料
| 型號： | GS8180S09 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 2Mb x 9Bit Separate I/O Sigma DDR SRAM(2M x 9位獨(dú)立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM) |
| 中文描述： | 2MB的x 9Bit分離I / O西格瑪?shù)腄DR SRAM的（2米× 9位獨(dú)立的I / O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM） |
| 文件頁數(shù)： | 17/32頁 |
| 文件大?。?/td> | 853K |
| 代理商： | GS8180S09 |
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Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
17/32
2000, Giga Semiconductor, Inc.
A
Advanced Information
GS8180S09/18/36B-333/300/275/250
CMOS I/O DC Input Characteristics
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 3.3 V)
Note: This parameter is sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87.
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
2.
3.
Parameter
Symbol
V
IH
V
IL
Min.
Typ.
Max.
V
DD
+ 0.3
0.35 * V
DDQ
Unit
Notes
CMOS Input High Voltage
0.65 * V
DDQ
—
V
2
CMOS Input Low Voltage
Note: For devices supplied with CMOS input buffers. Compatible with both 1.8 V and 1.5 V I/O drivers.
–0.3
—
V
2
Parameter
Symbol
C
IN
C
OUT
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
R
Θ
JA
R
Θ
JA
R
Θ
JC
Max
Unit
°
C/W
°
C/W
°
C/W
Notes
Junction to Ambient (at 200 lfm)
single
TBD
1,2
Junction to Ambient (at 200 lfm)
four
TBD
1,2
Junction to Case (TOP)
—
TBD
3
20% tKC
V
SS
– 1.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 1.0 V
50%
V
DD
V
IL
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