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參數(shù)資料
| 型號： | EDI9LC644V |
| 英文描述： | 128Kx32 SSRAM/1Mx32 SDRAM Array(3.3V,128x32同步靜態(tài)RAM和1Mx32同步動態(tài)RAM陣列) |
| 中文描述： | 128Kx32 SSRAM/1Mx32內(nèi)存陣列（3.3伏，128x32同步靜態(tài)內(nèi)存和1Mx32同步動態(tài)內(nèi)存陣列） |
| 文件頁數(shù)： | 21/26頁 |
| 文件大?。?/td> | 460K |
| 代理商： | EDI9LC644V |
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White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
EDI9LC644V
EDI9LC644AV
RECOMMENDED DC OPERATING CONDITIONS
(0
°C ≤ TA ≤ 70°C; VCC = 3.3V -5% / +10% unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS
*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those indicated
in operational sections of this specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Voltage on Vcc Relative to Vss
-0.5V to +4.6V
Vin (DQx)
-0.5V to Vcc +0.5V
Storage Temperature (BGA)
-55
°C to +125°C
Junction Temperature
+175
°C
Short Circuit Output Current
100 mA
Parameter
Symbol
Min
Max
Units
Supply Voltage (1)
VCC
3.135
3.6
V
Input High Voltage (1,2)
VIH
2.0
VCC +0.3
V
Input Low Voltage (1,2)
VIL
-0.3
0.8
V
Input Leakage Current
ILI
-10
10
A
0
≤ VIN ≤ Vcc
Output Leakage (Output Disabled)
ILo
-10
10
A
0
≤ VIN ≤ Vcc
Output High (IOH = -4mA) (1)
VOH
2.4
—
V
Output Low (IOL = 8mA) (1)
VOL
—
0.4
V
NOTES:
1. All voltages referenced to Vss (GND).
2. Overshoot:
VIH
≤ +6.0V for t ≤ tKC/2
Underershoot:
VIL
≥ -2.0V for t ≤ tKC/2
DC ELECTRICAL CHARACTERISTICS
Description
Conditions
Symbol
Frequency
Typ
Max
Units
Power Supply Current:
133MHz
400
550
Operating (1,2,3)
SSRAM Active / DRAM Auto Refresh
Icc1
150MHz
450
580
mA
166MHz
500
625
200MHz
TBD
Power Supply Current
133MHz
300
450
Operating (1,2,3)
SSRAM Active / DRAM Idle
Icc2
150MHz
350
480
mA
166MHz
400
525
200MHz
TBD
Power Supply Current
83MHz
220
240
Operating (1,2,3)
SDRAM Active / SSRAM Idle
Icc3
100MHz
235
250
mA
125MHz
255
280
SSCE and SDCE
≤ Vcc -0.2V,
ISB1
20.0
40.0
CMOS Standby
All other inputs at Vss +0.2
≤ VIN or
mA
VIN
≤ VCC -0.2V, Clk frequency = 0
SSCE and SDCE
≤ VIH min
ISB2
30.0
55.0
TTL Standby
All other inputs at VIL max
≤ VIN or
mA
VIN
≤ VCC -0.2V, Clk frequency = 0
Auto Refresh
Icc5
190
250
mA
NOTES:
1. ICC (operating) is specified with no output current. ICC (operating) increases with faster cycle times and greater output loading.
2. "Device idle" means device is deselected (CE
≥ VIH) Clock is running at max frequency and Addresses are switching each cycle.
3. Typical values are measured at 3.3V, 25
°C. ICC (operating) is specified at specified frequency.
Description
Conditions
Symbol
Typ
Max
Units
Address Input Capacitance (1)
TA = 25
°C; f = 1MHz
CI
58
pF
Input/Output Capacitance (DQ) (1)
TA = 25
°C; f = 1MHz
CO
810
pF
Control Input Capacitance (1)
TA = 25
°C; f = 1MHz
CA
58
pF
Clock Input Capacitance (1)
TA = 25
°C; f = 1MHz
CCK
46
pF
NOTE:
1. This parameter is sampled.
BGA CAPACITANCE
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| EDI9LC644V1310BC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SSRAM/1Mx32 SDRAM |
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