參數(shù)資料
型號： AM49BDS640AHE8I
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： Stacked Multichip Package (MCP), Flash Memory and pSRAM CMOS 1.8 Volt-only Simultaneous Read/Write
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA89
封裝： 10 X 8 MM, FBGA-89
文件頁數(shù)： 47/84頁
文件大?。?/td> 763K
代理商： AM49BDS640AHE8I
December 5, 2003
Am49BDS640AH
45
A D V A N C E I N F O R M A T I O N
DC CHARACTERISTICS
CMOS COMPATIBLE
Note:
1. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
2. V
IO
= V
CC
3. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
4. I
CC
active while Embedded Erase or Embedded Program is in progress.
5. Device enters automatic sleep mode when addresses are stable for t
ACC
+ 60 ns. Typical sleep mode current is equal to I
CC3
.
6. Total current during accelerated programming is the sum of V
ACC
and V
CC
currents.
Parameter Description
Test Conditions Note: 1 & 2
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
±1
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
max
±1
μA
I
CCB
V
CC
Active burst Read Current
CE# = V
IL
, OE# = V
IH
,
WE# = V
IH
, burst length
= 8
54 MHz
9
17
mA
CE# = V
IL
, OE# = V
IH
,
WE# = V
IH
, burst length
= 16
54 MHz
8
15.5
mA
CE# = V
IL
, OE# = V
IH
,
WE# = V
IH
, burst length
= Continuous
54 MHz
7
14
mA
CE# = V
IL
, OE# = V
IH
, WE# = V
IH
,
burst length = 8
50
200
μA
I
IO1
V
IO
Non-active Output
OE# = V
IH
0.2
10
μA
I
CC1
V
CC
Active Asynchronous Read
Current (Note 3)
CE# = V
IL
, OE# = V
IH
,
WE# = V
IH
10 MHz
TBD
TBD
mA
5 MHz
12
16
mA
1 MHz
3.5
5
mA
I
CC2
V
CC
Active Write Current (Note 4)
CE# = V
IL
, OE# = V
IH
, ACC = V
IH
15
40
mA
I
CC3
V
CC
Standby Current (Note 5)
CE# = RESET# = V
CC
± 0.2 V
0.2
10
μA
I
CC4
V
CC
Reset Current
RESET# = V
IL,
CLK = V
IL
0.2
10
μA
I
CC5
V
CC
Active Current
(Read While Write)
CE# = V
IL
, OE# = V
IH
25
60
mA
I
CC6
V
CC
Sleep Current
CE# = V
IL
, OE# = V
IH
0.2
10
μA
I
ACC
Accelerated Program Current
(Note 6)
CE# = V
IL
, OE# = V
IH,
V
ACC
= 12.0 ± 0.5 V
V
ACC
7
15
mA
V
CC
5
10
mA
V
IL
Input Low Voltage
V
IO
= 1.8 V
–0.4
0.4
V
V
IH
Input High Voltage
V
IO
= 1.8 V
V
IO
– 0.4
V
IO
+ 0.4
V
OL
Output Low Voltage
I
OL
= 100 μA, V
IO
= V
CC
= V
CC
min
0.1
V
V
OH
Output High Voltage
I
OH
= –100 μA, V
IO
= V
CC
= V
CC
min
V
IO
– 0.1
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC
= 1.8
11.5
12.5
V
V
HH
Voltage for Accelerated Program
11.5
12.5
V
V
LKO
Low V
CC
Lock-out Voltage
1.0
1.4
V
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