參數(shù)資料
型號： AM49BDS640AHE8I
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： Stacked Multichip Package (MCP), Flash Memory and pSRAM CMOS 1.8 Volt-only Simultaneous Read/Write
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA89
封裝： 10 X 8 MM, FBGA-89
文件頁數(shù)： 3/84頁
文件大?。?/td> 763K
代理商： AM49BDS640AHE8I
ADVANCE INFORMATION
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. Do not design in this product without contacting the factory. AMD re-
serves the right to change or discontinue work on this proposed product without notice.
Publication#
31105
Issue Date:
December 5, 2003
Rev:
A
Amendment
0
Am49BDS640AH
Stacked Multichip Package (MCP), Flash Memory and pSRAM
CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode 64 Megabit (4
M x 16-Bit) Flash Memory, and 16 Mbit (1 M x 16-Bit) pSRAM
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single 1.8 volt read, program and erase (1.65 to 1.95 volt)
■
■
Manufactured on 0.13 μm process technology
■
VersatileIO (V
IO
) Feature
— Device generates data output voltages and tolerates data
input voltages as determined by the voltage on the V
IO
pin
— 1.8V compatible I/O signals
— Contact factory for availability of 1.5V compatible I/O signals
■
Simultaneous Read/Write operation
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
— Four bank architecture: 8Mb/24Mb/24Mb/8Mb
■
Programable Burst Interface
— 2 Modes of Burst Read Operation
— Linear Burst: 8, 16, and 32 words with wrap-around
— Continuous Sequential Burst
■
SecSi
TM
(Secured Silicon) Sector region
— Up to 128 words accessible through a command sequence
— Up to 64 factory-locked words
— Up to 64 customer-lockable words
Sector Architecture
— Sixteen 4 Kword sectors and one hundred twenty-six 32
Kword sectors
— Banks A and D each contain eight 4 Kword sectors and
fifteen 32 Kword sectors; Banks B and C each contain
forty-eight 32 Kword sectors
— Sixteen 4 Kword boot sectors: eight at the top of the address
range and eight at the bottom of the address range
■
■
■
Minimum 1 million erase cycle guarantee per sector
20-year data retention at 125°C
— Reliable operation for the life of the system
PERFORMANCE CHARCTERISTICS
Read access times at 66/54 MHz (C
L
=30 pF)
— Burst access times of 11/13.5 ns at industrial temperature
range
— Synchronous latency of 56/69 ns
■
— Asynchronous random access times of 50/55 ns
Power dissipation (typical values, C
L
= 30 pF)
— Burst Mode Read: 10 mA
— Simultaneous Operation: 25 mA
— Program/Erase: 15 mA
— Standby mode: 0.2 μA
■
HARDWARE FEATURES
Handshaking feature
— Provides host system with minimum possible latency by
monitoring RDY
■
— Reduced Wait-state handshaking option further reduces
initial access cycles required for burst accesses beginning
on even addresses
■
Hardware reset input (RESET#)
— Hardware method to reset the device for reading array data
■
WP# input
— Write protect (WP#) function allows protection of the four
highest and four lowest 4 kWord boot sectors, regardless of
sector protect status
Persistent Sector Protection
— A command sector protection method to lock combinations
of individual sectors and sector groups to prevent program or
erase operations within that sector
■
— Sectors can be locked and unlocked in-system at V
CC
level
Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups to
prevent program or erase operations within that sector using
a user-defined 64-bit password
■
■
ACC input: Acceleration function reduces programming
time; all sectors locked when ACC = V
IL
CMOS compatible inputs, CMOS compatible outputs
■
■
Low V
CC
write inhibit
SOFTWARE FEATURES
Supports Common Flash Memory Interface (CFI)
■
■
Software command set compatible with JEDEC 42.4
standards
— Backwards compatible with Am29F and Am29LV families
■
Data# Polling and toggle bits
— Provides a software method of detecting program and erase
operation completion
Erase Suspend/Resume
— Suspends an erase operation to read data from, or program
data to, a sector that is not being erased, then resumes the
erase operation
■
■
Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
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