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參數(shù)資料
| 型號： | AM42BDS640AGTD9IT |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲器 |
| 英文描述： | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA93 |
| 封裝： | 8 X 11.60 MM, FBGA-93 |
| 文件頁數(shù)： | 63/72頁 |
| 文件大小： | 1060K |
| 代理商： | AM42BDS640AGTD9IT |
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62
Am42BDS640AG
November 1, 2002
P R E L I M I N A R Y
AC CHARACTERISTICS
Note:
Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” while checking
the status of the program or erase operation in the “busy” bank. The system should read status twice to ensure valid information.
Figure 33.
Back-to-Back Read/Write Cycle Timings
OE#
CE#f
WE#
t
OEH
Data
Addresses
AVD#
PD/30h
AAh
RA
PA/SA
t
WC
t
DS
t
DH
t
RC
t
RC
t
OE
t
OEH
t
AS
t
AH
t
ACC
t
WP
t
GHWL
t
OEZ
t
WC
t
SR/W
Last Cycle in
Program or
Sector Erase
Command Sequence
Read status (at least two cycles) in same bank
and/or array data from other bank
Begin another
write or program
command sequence
RD
RA
555h
RD
t
WPH
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| AM42DL1612DB30IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
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| AM42DL1612DB35IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
| AM42DL1612DB35IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
| AM42DL1612DB45IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
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