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參數(shù)資料
| 型號： | W9412G6CH-5 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封裝： | 0.400 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 |
| 文件頁數(shù)： | 30/55頁 |
| 文件大小： | 2011K |
| 代理商： | W9412G6CH-5 |
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W9412G6CH
Publication Release Date:Nov. 19, 2007
- 36 -
Revision A07
h. Only intended for operation up to 266 Mbps per pin.
i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below
0.5 V/nS as shown in Table 2. The Input slew rate is based on the lesser of the slew rates
determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew
rates differ, as shown in Tables 3 & 4. Input slew rate is based on the larger of AC-AC delta rise,
fall rate and DC-DC delta rise, fall rate. Input slew rate is based on the lesser of the slew rates
determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
The delta rise/fall rate is calculated as:
{1/(Slew Rate1)}-{1/(slew Rate2)}
For example: If Slew Rate 1 is 0.5 V/nS and Slew Rate 2 is 0.4 V/nS, then the delta rise, fall rate is
-0.5 nS/V. Using the table given, this would result in the need for an increase in tDS and tDH of 100
pS.
k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/nS. The
I/O slew rate is based on the lesser of the AC-AC slew rate and the DC-DC slew rate. The input
slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC)
to VIL(DC), and similarly for rising transitions.
m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve
setup and hold times. Signal transitions through the DC region must be monotonic.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9412G6IH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M × 4 BANKS × 16 BITS DDR SDRAM |
| W9412G6IH-5 | 功能描述:IC DDR-400 SDRAM 128MB 66TSSOPII RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| W9412G6JH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M ? 4 BANKS ? 16 BITS DDR SDRAM |
| W9412G6JH-4 | 制造商:Winbond Electronics Corp 功能描述:8*16B DDR1 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 128M 250MHZ 66TSOP |
| W9412G6JH-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP 制造商:Winbond Electronics Corp 功能描述:128M BIT DDR1 |
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