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參數(shù)資料
| 型號： | W9412G6CH-5 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封裝： | 0.400 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 |
| 文件頁數(shù)： | 11/55頁 |
| 文件大小： | 2011K |
| 代理商： | W9412G6CH-5 |
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W9412G6CH
Publication Release Date: Nov. 19, 2007
- 19 -
Revision A07
8.2 Function Truth Table
(Note 1)
CURRENT
STATE
CS RAS
CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
H
X
DSL
NOP
L
H
X
NOP/BST
NOP
L
H
L
H
BS, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BS, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BS, RA
ACT
Row activating
L
H
L
BS, A10
PRE/PREA
NOP
L
H
X
AREF/SELF
Refresh or Self refresh
2
Idle
L
Op-Code
MRS/EMRS
Mode register accessing
2
H
X
DSL
NOP
L
H
X
NOP/BST
NOP
L
H
L
H
BS, CA, A10
READ/READA
Begin read: Determine AP
4
L
H
L
BS, CA, A10
WRIT/WRITA
Begin write: Determine AP
4
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
Precharge
5
L
H
X
AREF/SELF
ILLEGAL
Row Active
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
Burst stop
L
H
L
H
BS, CA, A10
READ/READA
Term burst, new read: Determine AP
6
L
H
L
BS, CA, A10
WRIT/WRITA
ILLEGAL
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
Term burst, Precharging
L
H
X
AREF/SELF
ILLEGAL
Read
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
ILLEGAL
L
H
L
H
BS, CA, A10
READ/READA
Term burst, start read: Determine AP
6, 7
L
H
L
BS, CA, A10
WRIT/WRITA
Term burst, start read: Determine AP
6
L
H
BS, RA
ACT
ILLEGAL
3
L
H
L
BS, A10
PRE/PREA
Term burst, Precharging
8
L
H
X
AREF/SELF
ILLEGAL
Write
L
Op-Code
MRS/EMRS
ILLEGAL
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9412G6IH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M × 4 BANKS × 16 BITS DDR SDRAM |
| W9412G6IH-5 | 功能描述:IC DDR-400 SDRAM 128MB 66TSSOPII RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| W9412G6JH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M ? 4 BANKS ? 16 BITS DDR SDRAM |
| W9412G6JH-4 | 制造商:Winbond Electronics Corp 功能描述:8*16B DDR1 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 128M 250MHZ 66TSOP |
| W9412G6JH-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP 制造商:Winbond Electronics Corp 功能描述:128M BIT DDR1 |
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