參數(shù)資料
型號(hào): V58C2512404SAT5I
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: 128M X 4 DDR DRAM, 0.65 ns, PDSO66
封裝: 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66
文件頁數(shù): 53/60頁
文件大?。?/td> 914K
代理商: V58C2512404SAT5I
57
ProMOS TECHNOLOGIES
V58C2512(804/404/164)SA*I
V58C2512(804/404/164)SA*I Rev. 1.6 May 2007
Figure 47 - BANK WRITE ACCESS
CK
/CK
COMMAND
NOP
WRITE
ACT
CKE
RA
A10
BA0, BA1
Bank
x
Bank
x
DON'T CARE
DI
n = Data In for column n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are applied in the programmed order following DI
n
DIS AP = Disable Autoprecharge
* = "Don't Care", if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address
NOP commands are shown for ease of illustration; other valid commands may be possible at these times
NOP
PRE
DIS AP
ONE BANK
ALL BANKS
tCK
tCH
tCL
tIS
tIH
tIS
tIH
tRCD
tRAS
tIH
tIS tIH
RA
Col
n
*Bank
x
RA
tWR
DQ
DM
DQS
DI
n
t
tDQSS
t
Case 1:
tDQSS = min
Case 2:
tDQSS = max
DQ
DM
DQS
DI
n
t
tDQSS
t
WPST
DQSH
DQSL
tWPRES
WPST
DQSH
DQSL
WPRE
WPRES
tWPRE
tDSS
tDSH
x4:A0-A9,A11,A12
x8:A0-A9, A11
x16:A0-A9
x8:A12
x16:A11, A12
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