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438
User’s Manual U14260EJ3V1UD
CHAPTER 23
μ
PD78F0078, 78F0078Y
The
μ
PD78F0078 and 78F0078Y are provided as the flash memory versions of the
μ
PD780078, 780078Y
Subseries.
The
μ
PD78F0078 and 78F0078Y are products that incorporate flash memory in which the program can be written,
erased, and rewritten while it is mounted on the board.
Writing to flash memory can be performed with the memory mounted on the target system (on board). A dedicated
flash programmer is connected to the target system to perform writing.
The following can be considered as the development environment and the applications using flash memory.
Software can be altered after the
μ
PD78F0078 and 78F0078Y are solder-mounted on the target system.
Small scale production of various models is made easier by differentiating software.
Data adjustment in starting mass production is made easier.
Table 23-1 shows the differences between the
μ
PD78F0078 and 78F0078Y and the mask ROM versions.
Table 23-1. Differences Between
μ
PD78F0078 and Mask ROM Versions
Item
μ
PD78F0078
μ
PD780076
μ
PD780078
Internal ROM configuration
Flash memory
Mask ROM
Internal ROM capacity
60 KB
Note 1
48 KB
60 KB
Mask option to specify on-chip
pull-up resistors of pins P30 to
P33
Note 2
Not possible
Possible
IC pin
None
Available
V
PP
pin
Available
None
Electrical specifications,
recommended soldering conditions
Refer to the chapters of electrical specifications and recommended soldering
conditions.
Notes 1.
The same capacity as the mask ROM versions can be specified by means of the memory size switching
register (IMS).
2.
The P30 and P31 pins are provided only in the
μ
PD780078Y Subseries.
Caution
There are differences in noise immunity and noise radiation between the flash memory and
mask ROM versions. When pre-producing an application set with the flash memory version and
then mass-producing it with the mask ROM version, be sure to conduct sufficient evaluations
for the commercial samples (not engineering samples) of the mask ROM versions.