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參數(shù)資料
| 型號(hào)： | SI4884DY |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| 中文描述： | 0.01 ohm, Si, POWER, FET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 89K |
| 代理商： | SI4884DY |
Philips Semiconductors
SI4884
TrenchMOS logic level FET
Product data
Rev. 02 — 12 April 2002
7 of 12
9397 750 09582
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (
o
C)
VGS(th)
(V)
max
typ
min
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
ID
(A)
0
1
2
3
VGS (V)
max
typ
min
Ciss
Coss
Crss
102
103
104
C
(pF)
1
10
102
10-1
VDS (V)
003aaa165
VSD (V)
IS
(A)
1
20
4
8
12
16
0
25
ο
C
0.4
0.6
0.8
150
ο
C
003aaa166
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PDF描述 |
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| SI5311-H(B) | IRED |
| SI5411-H | IRED |
| SI5411-H(B) | IRED |
| SI5314-H(B) | Piccolo Series Clear Cover Enclosure; NEMA Type:1, 4X, 6, 12, 13; Enclosure Material:Plastic; External Height:2.6"; External Width:3.1"; External Depth:4.3"; Enclosure Color:Light Gray; Cover Color:Transparent RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4884DY | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| SI4884DY-E3 | 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4884DY-T1 | 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4884DY-T1-E3 | 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4884DY-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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