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參數(shù)資料
| 型號： | SI4884DY |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| 中文描述： | 0.01 ohm, Si, POWER, FET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 89K |
| 代理商： | SI4884DY |
Philips Semiconductors
SI4884
TrenchMOS logic level FET
Product data
Rev. 02 — 12 April 2002
3 of 12
9397 750 09582
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
V
GS
≥
5 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
T
sp
= 25
°
C; I
DM
is single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
40
80
Pder
(%)
120
0
50
100
150
200
Tsp (oC)
03aa25
0
40
80
120
0
50
100
150
200
T
sp
(
o
C)
I
der
(%)
P
der
P
tot 25 C
°
)
-----------------------
100
%
×
=
I
der
I
I
D 25 C
)
-------------------
100
%
×
=
Limit RDSon = VDS / ID
DC
tp =
10
μ
s
100
μ
s
1 ms
10 ms
VDS (V)
102
10
1
10-1
ID
(A)
102
10
10-1
1
10-2
003aaa160
1 s
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| SI5314-H(B) | Piccolo Series Clear Cover Enclosure; NEMA Type:1, 4X, 6, 12, 13; Enclosure Material:Plastic; External Height:2.6"; External Width:3.1"; External Depth:4.3"; Enclosure Color:Light Gray; Cover Color:Transparent RoHS Compliant: Yes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI4884DY | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| SI4884DY-E3 | 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4884DY-T1 | 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4884DY-T1-E3 | 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4884DY-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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