參數(shù)資料
型號(hào)： S29GL128P11FFIR12
廠商： SPANSION LLC
元件分類(lèi)： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
封裝： 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64
文件頁(yè)數(shù)： 41/77頁(yè)
文件大?。?/td> 2121K
代理商： S29GL128P11FFIR12
November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
Flash Family
41
D a t a
S h e e t
( P r e l i m i n a r y )
7.9.3
Software Reset
Software reset is part of the command set (see
Table 12.1 on page 68
) that also returns the device to array
read mode and must be used for the following conditions:
1. to exit Autoselect mode
2. when DQ5 goes high during write status operation that indicates program or erase cycle was not
successfully completed
3. exit sector lock/unlock operation.
4. to return to erase-suspend-read mode if the device was previously in Erase Suspend mode.
5. after any aborted operations
Software Functions and Sample Code
Note
Base = Base Address.
The following is a C source code example of using the reset function. Refer to the
Spansion Low Level Driver
User’s Guide
(available on
www.spansion.com
) for general information on Spansion Flash memory software
development guidelines.
/* Example: Reset (software reset of Flash state machine) */
*( (UINT16 *)base_addr ) = 0x00F0;
The following are additional points to consider when using the reset command:
This command resets the sectors to the read and address bits are ignored.
Reset commands are ignored during program and erase operations.
The reset command may be written between the cycles in a program command sequence before
programming begins (prior to the third cycle). This resets the sector to which the system was writing to the
read mode.
If the program command sequence is written to a sector that is in the Erase Suspend mode, writing the
reset command returns that sector to the erase-suspend-read mode.
The reset command may be written during an Autoselect command sequence.
If a sector has entered the Autoselect mode while in the Erase Suspend mode, writing the reset command
returns that sector to the erase-suspend-read mode.
If DQ1 goes high during a Write Buffer Programming operation, the system must write the “Write to Buffer
Abort Reset” command sequence to RESET the device to reading array data. The standard RESET
command does not work during this condition.
To exit the unlock bypass mode, the system must issue a two-cycle unlock bypass reset command
sequence [see
Command Definitions
on page 67
for details].
Table 7.18
Reset
(LLD Function = lld_ResetCmd)
Cycle
Operation
Byte Address
Word Address
Data
Reset Command
Write
Base + xxxh
Base + xxxh
00F0h
相關(guān)PDF資料
PDF描述
S29GL128P11FFIV10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11FFIV12 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11TAI010 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11TAI012 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11TAIR10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128P11FFIS10 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Trays
S29GL128P11FFIS30 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Trays
S29GL128P11FFIS33 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Tape and Reel
S29GL128P11FFIS40 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Bulk
S29GL128P11FFIS43 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Tape and Reel
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