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參數(shù)資料
| 型號(hào)： | S29GL128P11FFIR12 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |
| 文件頁數(shù)： | 31/77頁 |
| 文件大?。?/td> | 2121K |
| 代理商： | S29GL128P11FFIR12 |
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November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
Flash Family
31
D a t a
S h e e t
( P r e l i m i n a r y )
Figure 7.3
Sector Erase Operation
Notes
1. See
Table 12.1 on page 68
for erase command sequence.
2. See
DQ3: Sector Erase Timeout State Indicator on page 39
for information on the sector erase timeout.
No
Write Unlock Cycle
s
:
Addre
ss
555h, D
a
t
a
AAh
Addre
ss
2AAh, D
a
t
a
55h
Write
S
ector Er
as
e Cycle
s
:
Addre
ss
555h, D
a
t
a
8
0h
Addre
ss
555h, D
a
t
a
AAh
Addre
ss
2AAh, D
a
t
a
55h
S
ector Addre
ss
, D
a
t
a
3
0h
Write Addition
a
l
S
ector Addre
ss
e
s
FAIL. Write re
s
et comm
a
nd
to ret
u
rn to re
a
ding
a
rr
a
y.
PA
SS
. Device ret
u
rn
s
to re
a
ding
a
rr
a
y.
Perform Write Oper
a
tion
S
t
a
t
us
Algorithm
(see
Figure 7.4
)
S
elect
Addition
a
l
S
ector
s
Unlock Cycle 1
Unlock Cycle 2
Ye
s
Ye
s
Ye
s
Ye
s
Ye
s
No
No
No
No
L
as
t
S
ector
S
elected
Done
DQ5 = 1
Comm
a
nd Cycle 1
Comm
a
nd Cycle 2
Comm
a
nd Cycle
3
S
pecify fir
s
t
s
ector for er
asu
re
Error condition (Exceeded Timing Limit
s
)
S
t
a
t
us
m
a
y
b
e o
b
t
a
ined
b
y re
a
ding DQ7, DQ6
a
nd/or DQ2.
Poll DQ
3
.
DQ
3
= 1
E
a
ch
a
ddition
a
l cycle m
us
t
b
e written within t
S
EA
timeo
u
t
The ho
s
t
s
y
s
tem m
a
y monitor DQ
3
or w
a
it t
S
EA
to en
su
re
a
ccept
a
nce of er
as
e comm
a
nd
s
No limit on n
u
m
b
er of
s
ector
s
Comm
a
nd
s
other th
a
n Er
as
e
Sus
pend or
s
electing
a
ddition
a
l
s
ector
s
for er
asu
re d
u
ring timeo
u
t re
s
et device to re
a
ding
a
rr
a
y
d
a
t
a
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