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參數(shù)資料
| 型號： | R1RP0408DGE-2PR |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 12 ns, PDSO36 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-36 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 144K |
| 代理商： | R1RP0408DGE-2PR |
R1RP0408D Series
RJE03C0112-0200
Rev.2.00,
Dec.1.2008,
page 12 of 12
Low VCC Data Retention Characteristics
(Ta = 0 to +70
°C)
This characteristics is guaranteed only for L-version.
Parameter
Symbol
Min
Max
Unit
Test conditions
VCC for data retention
VDR
2.0
V
VCC
≥ CS# ≥ VCC 0.2 V
(1) 0 V
≤ VIN ≤ 0.2 V or
(2) VCC
≥ VIN ≥ VCC 0.2 V
Data retention current
ICCDR
500
A
VCC = 3 V, VCC
≥ CS# ≥ VCC 0.2 V
(1) 0 V
≤ VIN ≤ 0.2 V or
(2) VCC
≥ VIN ≥ VCC 0.2 V
Chip deselect to data
retention time
tCDR
0
ns
See retention waveform
Operation recovery time
tR
5
ms
Low VCC Data Retention Timing Waveform
CC
V
2.2 V
4.5 V
0 V
CS#
tCDR
tR
DR
V
Data retention mode
VCC ≥ CS# ≥ VCC 0.2 V
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| R1RP0408DGE-2PR#B0 | 制造商:Renesas Electronics 功能描述:SRAM Chip Async Single 5V 4M-Bit 512K x 8 12ns 36-Pin SOJ Tray |
| R1RP0408DGE-2PR(#B0) | 制造商:Renesas Electronics 功能描述:12ns 制造商:Renesas 功能描述:SRAM Chip Async Single 5V 4M-Bit 512K x 8 12ns 36-Pin SOJ |
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