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參數(shù)資料
| 型號： | R1RP0408DGE-2PR |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 12 ns, PDSO36 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-36 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 144K |
| 代理商： | R1RP0408DGE-2PR |
RJE03C0112-0200
Rev.2.00,
Dec.1.2008,
page 1 of 12
R1RP0408D Series
4M High Speed SRAM (512-kword
× 8-bit)
REJ03C0112-0200
Rev. 2.00
Dec.1.2008
Description
The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word
× 8-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology.
It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system.
It is packaged in
400-mil 36-pin plastic SOJ.
Features
Single 5.0 V supply: 5.0 V ± 10%
Access time: 10 ns / 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 140mA /130mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
:
1.0 mA (max) (L-version)
Data retention current: 0.5 mA (max) (L-version)
Data retention voltage: 2 V (min) (L-version)
Center V
CC and VSS type pin out
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| R1RP0408DGE-2PR#B0 | 制造商:Renesas Electronics 功能描述:SRAM Chip Async Single 5V 4M-Bit 512K x 8 12ns 36-Pin SOJ Tray |
| R1RP0408DGE-2PR(#B0) | 制造商:Renesas Electronics 功能描述:12ns 制造商:Renesas 功能描述:SRAM Chip Async Single 5V 4M-Bit 512K x 8 12ns 36-Pin SOJ |
| R1RP0408DI | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit) |
| R1RP0416D | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:4M High Speed SRAM (256-kword X 16-bit) |
| R1RP0416DGE-2LR | 制造商:Renesas Electronics Corporation 功能描述:R1RP0416DGE-2LR |
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