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參數(shù)資料
| 型號： | R1RP0408DGE-2PR |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 12 ns, PDSO36 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-36 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大小： | 144K |
| 代理商： | R1RP0408DGE-2PR |
R1RP0408D Series
RJE03C0112-0200
Rev.2.00,
Dec.1.2008,
page 5 of 12
Operation Table
CS#
OE#
WE#
Mode
VCC current
I/O
Ref. cycle
H
×
Standby
ISB, ISB1
High-Z
L
H
Output disable
ICC
High-Z
L
H
Read
ICC
DOUT
Read cycle (1) to (3)
L
H
L
Write
ICC
DIN
Write cycle (1)
L
Write
ICC
DIN
Write cycle (2)
Note:
H:
VIH, L: VIL,
×: VIH or VIL
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
VCC
0.5 to +7.0
V
Voltage on any pin relative to VSS
VT
0.5*
1 to V
CC + 0.5*
2
V
Power dissipation
PT
1.0
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
55 to +125
°C
Storage temperature under bias
Tbias
10 to +85
°C
Notes: 1. VT (min) =
2.0 V for pulse width (under shoot) ≤ 6 ns.
2. VT (max) = VCC + 2.0 V for pulse width (over shoot)
≤ 6 ns.
Recommended DC Operating Conditions
(Ta = 0 to +70
°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC*
3
4.5
5.0
5.5
V
VSS*
4
0
V
Input voltage
VIH
2.2
VCC + 0.5*
2
V
VIL
0.5*
1
0.8
V
Notes: 1. VIL (min) =
2.0 V for pulse width (under shoot) ≤ 6 ns.
2. VIH (max) = VCC + 2.0 V for pulse width (over shoot)
≤ 6 ns.
3. The supply voltage with all VCC pins must be on the same level.
4. The supply voltage with all VSS pins must be on the same level.
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