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參數(shù)資料
| 型號(hào)： | R1RP0408DGE-2PR |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 12 ns, PDSO36 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-36 |
| 文件頁(yè)數(shù)： | 15/16頁(yè) |
| 文件大?。?/td> | 144K |
| 代理商： | R1RP0408DGE-2PR |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)當(dāng)前第15頁(yè)第16頁(yè)
R1RP0408D Series
RJE03C0112-0200
Rev.2.00,
Dec.1.2008,
page 6 of 12
DC Characteristics
(Ta = 0 to +70
°C, VCC = 5.0 V ± 10%, VSS = 0 V)
Parameter
Symbol
Min
Max
Unit
Test conditions
Input leakage current
IILII
2
A
VIN = VSS to VCC
Output leakage current
IILOI
2
A
VIN = VSS to VCC
10nscycle ICC
140
mA
Operation power supply
current
12nscycle ICC
130
mA
Min cycle
CS# = VIL, lOUT = 0 mA
Other inputs = VIH/VIL
Standby power supply current
ISB
40
mA
Min cycle, CS# = VIH,
Other inputs = VIH/VIL
ISB1
5
mA
f = 0 MHz
VCC
≥ CS# ≥ VCC 0.2 V,
(1) 0 V
≤ VIN ≤ 0.2 V or
(2) VCC
≥ VIN ≥ VCC 0.2 V
*
1
1.0*
1
Output voltage
VOL
0.4
V
IOL = 8 mA
VOH
2.4
V
IOH =
4 mA
Note:
1. This characteristics is guaranteed only for L-version.
Capacitance
(Ta = +25
°C, f = 1.0 MHz)
Parameter
Symbol
Min
Max
Unit
Test conditions
Input capacitance*
1
CIN
6
pF
VIN = 0 V
Input/output capacitance*
1
CI/O
8
pF
VI/O = 0 V
Note:
1. This parameter is sampled and not 100% tested.
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