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參數(shù)資料
| 型號(hào)： | NAND01GW4A2BV1E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| 中文描述： | 128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的頁面，1.8V/3V，NAND閃存芯片 |
| 文件頁數(shù)： | 26/57頁 |
| 文件大?。?/td> | 410K |
| 代理商： | NAND01GW4A2BV1E |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
26/57
Copy Back Program
The Copy Back Program operation is used to copy
the data stored in one page and reprogram it in an-
other page.
The Copy Back Program operation does not re-
quire external memory and so the operation is
faster and more efficient because the reading and
loading cycles are not required. The operation is
particularly useful when a portion of a block is up-
dated and the rest of the block needs to be copied
to the newly assigned block.
If the Copy Back Program operation fails an error
is signalled in the Status Register. However as the
standard external ECC cannot be used with the
Copy Back operation bit error due to charge loss
cannot be detected. For this reason it is recom-
mended to limit the number of Copy Back opera-
tions on the same data and or to improve the
performance of the ECC.
The Copy Back Program operation requires three
steps:
1.
The source page must be read using the Read
A command (one bus write cycle to setup the
command and then 4 bus write cycles to input
the source page address). This operation
copies all 264 Words/ 528 Bytes from the page
into the Page Buffer.
2.
When the device returns to the ready state
(Ready/Busy High), the second bus write
cycle of the command is given with the 4 bus
cycles to input the target page address. Refer
to
Table 10.
for the addresses that must be the
same for the Source and Target pages.
Then the confirm command is issued to start
the P/E/R Controller.
After a Copy Back Program operation, a partial-
page program is not allowed in the target page un-
til the block has been erased.
See
Figure 18.
for an example of the Copy Back
operation.
3.
Table 10. Copy Back Program Addresses
Note: 1. DD = Dual Die.
Figure 18. Copy Back Operation
Density
Same Address for Source and
Target Pages
128 Mbit
A23
256 Mbit
A24
512 Mbit
A25
512 Mbit DD
(1)
A24, A25
1 Gbit DD
(1)
A25, A26
I/O
RB
AddSource
SR0
ai07590b
8Ah
70h
00h
Copy Back
Code
Read
Code
Read Status Register
Target
Address Inputs
tBLBH1
(Read Busy time)
10h
Busy
tBLBH2
(Program Busy time)
相關(guān)PDF資料 |
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|---|---|
| NAND128R3A2BV1E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND128W4A0CV6T | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND512R3A0BN6E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND512R3A0CZB6T | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND512R3A2BZA1F | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND01GW4A2BV1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW4A2BV1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW4A2BV6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW4A2BV6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GW4A2BV6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
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