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64Mb: x32 SDRAM
64MSDRAMx32_5.p65 – Rev. B; Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
64Mb: x32
SDRAM
WRITE – WITHOUT AUTO PRECHARGE
1
NOTE:
1. For this example, the burst length = 4, and the WRITE burst is followed by a “manual” PRECHARGE.
2. Faster frequencies require two clocks (when
t
WR >
t
CK).
3. A8 and A9 = “Don’t Care.”
4.
t
WR of 1 CLK available if running 100 MHz or slower. Check factory for availability.
*CAS latency indicated in parentheses.
-5
-6
-7
SYMBOL*
t
CMH
t
CMS
t
DH
t
DS
t
RAS
t
RC
t
RCD
t
RP
t
WR
4
MIN
1
1.5
1
1.5
38.7
55
15
15
2
t
CK
MAX
MIN
1
1.5
1
1.5
42
60
18
18
12
MAX
MIN
1
2
1
2
42
70
20
20
14
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
120,000
120,000
120,000
TIMING PARAMETERS
-5
-6
-7
SYMBOL*
t
AH
t
AS
t
CH
t
CL
t
CK (3)
t
CK (2)
t
CK (1)
t
CKH
t
CKS
MIN
1
1.5
2
2
5
MAX
MIN
1
1.5
2.5
2.5
6
10
20
1
2
MAX
MIN
1
2
2.75
2.75
7
10
20
1
2
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
1.5
DISABLE AUTO PRECHARGE
ALL BANKs
tCH
tCL
tCK
tRP
tRAS
tRC
tRCD
CKE
CLK
DQ
A10
tCMH
tCMS
tAH
tAS
ROW
ROW
BANK
BANK
BANK
ROW
ROW
BANK
tWR
DON’T CARE
D
IN
m
tDH
tDS
D
IN
m
+ 1
D
IN
m
+ 2
D
IN
m
+ 3
COMMAND
tCMH
tCMS
NOP
NOP
NOP
ACTIVE
NOP
WRITE
NOP
PRECHARGE
ACTIVE
tAH
tAS
tAH
tAS
tDH
tDS
tDH
tDS
tDH
tDS
SINGLE BANK
tCKH
tCKS
COLUMN
m
3
2
T0
T1
T2
T4
T3
T5
T6
T7
T8
DQM 0-3
BA0, BA1
A0-A9