參數(shù)資料
型號(hào): MPC5553MVR132
廠商: Freescale Semiconductor
文件頁數(shù): 17/68頁
文件大小: 0K
描述: MCU 1.5MB FLASH 132MHZ 416-PBGA
標(biāo)準(zhǔn)包裝: 200
系列: MPC55xx Qorivva
核心處理器: e200z6
芯體尺寸: 32-位
速度: 132MHz
連通性: CAN,EBI/EMI,以太網(wǎng),SCI,SPI
外圍設(shè)備: DMA,POR,PWM,WDT
輸入/輸出數(shù): 220
程序存儲(chǔ)器容量: 1.5MB(1.5M x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 64K x 8
電壓 - 電源 (Vcc/Vdd): 1.35 V ~ 1.65 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 40x12b
振蕩器型: 外部
工作溫度: -40°C ~ 125°C
封裝/外殼: 416-BBGA
包裝: 托盤
MPC5553 Microcontroller Data Sheet, Rev. 4
Electrical Characteristics
Freescale Semiconductor
24
3.11
H7Fa Flash Memory Electrical Characteristics
Table 14. Flash Program and Erase Specifications (TA = TL to TH)
Spec
Flash Program Characteristic
Symbol
Min.
Typical 1
1 Typical program and erase times are calculated at 25 oC operating temperature using nominal supply values.
Initial
Max. 2
2 Initial factory condition:
100program/erase cycles, 25 oC, using a typical supply voltage measured at a minimum system
frequency of 80 MHz.
Max. 3
3 The maximum erase time occurs after the specified number of program/erase cycles. This maximum value is characterized
but not guaranteed.
Unit
3
Doubleword (64 bits) program time 4
4 Actual hardware programming times. This does not include software overhead.
Tdwprogram
10
500
s
4
Page program time 4
Tpprogram
22
44 5
5 Page size is 256 bits (8 words).
500
s
7
16 KB block pre-program and erase time
T16kpperase
265
400
5000
ms
9
48 KB block pre-program and erase time
T48kpperase
345
400
5000
ms
10
64 KB block pre-program and erase time
T64kpperase
415
500
5000
ms
8
128 KB block pre-program and erase time
T128kpperase
500
1250
7500
ms
11
Minimum operating frequency for program and erase
operations 6
6 The read frequency of the flash can range up to the maximum operating frequency. There is no minimum read frequency
condition.
—25
MHz
Table 15. Flash EEPROM Module Life (TA = TL to TH)
Spec
Characteristic
Symbol
Min.
Typical 1
1 Typical endurance is evaluated at 25o C. Product qualification is performed to the minimum specification. For additional
information on the Freescale definition of typical endurance, refer to engineering bulletin EB619 Typical Endurance for
Nonvolatile Memory.
Unit
1a
Number of program/erase cycles per block for 16 KB, 48 KB, and
64 KB blocks over the operating temperature range (TJ)
P/E
100,000
cycles
1b
Number of program/erase cycles per block for 128 KB blocks over the
operating temperature range (TJ)
P/E
1000
100,000
cycles
2
Data retention
Blocks with 0–1,000 P/E cycles
Blocks with 1,001–100,000 P/E cycles
Retention
20
5
years
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