參數(shù)資料
型號： M6MGB160S4BVP
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
中文描述： 3.3的CMOS只快閃記憶體
文件頁數(shù)： 22/30頁
文件大?。?/td> 257K
代理商： M6MGB160S4BVP
MITSUBISHI LSIs
Sep. 1999 , Rev.2.0
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T160S4BVP
22
FULL STATUS CHECK PROCEDURE
SR.5 = 0
SR.4 = 0
SR.4 =1
and
SR.5 =1
SUCCESSFUL
(BLOCK ERASE, PROGRAM)
YES
YES
YES
NO
STATUS REGISTER
READ
COMMAND SEQUENCE ERROR
NO
BLOCK ERASE ERROR
NO
PROGRAM ERROR
(BLOCK)
WRITE 77H
WRITE D0H
BLOCK ADDRESS
LOCK BIT PROGRAM FLOW CHART
SR.4 = 0
LOCK BIT PROGRAM
SUCCESSFUL
YES
YES
NO
NO
START
LOCK BIT PROGRAM
FAILED
SR.7 = 1
SR.3 = 0
YES
NO
PROGRAM ERROR
(PAGE, LOCK BIT)
PAGE PROGRAM FLOW CHART
START
WRITE 41H
FULL STATUS CHECK
IF DESIRED
PAGE PROGRAM
COMPLETED
YES
n = 0
n = n+1
WRITE
ADDRESS n, DATA n
YES
SR.7 = 1
n = FFH
or
n = 7FH
NO
WRITE B0H
YES
NO
SUSPEND LOOP
WRITE D0H
YES
NO
STATUS REGISTER
READ
BYTE PROGRAM FLOW CHART
START
WRITE 40H
FULL STATUS CHECK
IF DESIRED
PAGE PROGRAM
COMPLETED
YES
WRITE
ADDRESS , DATA
SR.7 = 1
WRITE B0H
YES
NO
SUSPEND LOOP
WRITE D0H
YES
NO
STATUS REGISTER
READ
* Byte/Word program is admitted to only BANK(I).
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M6MGB162S2BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB162S4BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
M6MGB166S2BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB331S4BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
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