參數資料
型號： M6MGB160S4BVP
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
中文描述： 3.3的CMOS只快閃記憶體
文件頁數： 13/30頁
文件大?。?/td> 257K
代理商： M6MGB160S4BVP
MITSUBISHI LSIs
Sep. 1999 , Rev.2.0
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T160S4BVP
13
3.3V
GND
F-V
CC
Vcc POWER UP / DOWN TIMING
V
IH
V
IL
F-RP#
Read /Write Inhibit
t
VCS
V
IH
V
IL
F-CE#
V
IH
V
IL
WE#
t
PS
t
PS
Read /Write Inhibit
Read /Write Inhibit
TEST CONDITIONS
FOR AC CHARACTERISTICS
Input voltage : V
IL
= 0V, V
IH
= 3.0V
Input rise and fall times :
￡
5ns
Reference voltage
at timing measurement : 1.5V
Output load : 1TTL gate +
CL(30pF)
or
DUT
3.3k
W
1N914
1.3V
C
L
=30pF
AC WAVEFORMS FOR READ OPERATION AND TEST CONDITIONS
OUTPUT VALID
HIGH-Z
t
DF(OE)
t
RC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
ADDRESSES
F-CE#
OE#
WE#
DATA
ADDRESS VALID
t
OH
t
OLZ
t
a (CE)
t
OEH
t
CLZ
t
a (AD)
t
a (OE)
HIGH-Z
V
IH
V
IL
F-RP#
t
PS
t
DF(CE)
t
PHZ
相關PDF資料
PDF描述
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相關代理商/技術參數
參數描述
M6MGB162S2BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB162S4BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
M6MGB166S2BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB331S4BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
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