參數(shù)資料
型號(hào)： M6MGT162S4BVP
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
中文描述： 3.3的CMOS只快閃記憶體
文件頁數(shù)： 1/29頁
文件大小： 239K
代理商： M6MGT162S4BVP
Sep. 1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T162S4BVP
1
DESCRIPTION
The MITSUBISHI M6MGB/T162S4BVP is a Stacked Multi
Chip Package (S-MCP) that contents 16M-bits flash memory
and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I).
16M-bits Flash memory is a 1048576 words, 3.3V-only, and
high performance non-volatile memory fabricated by CMOS
technology for the peripheral circuit and DINOR(DIvided
bit-line NOR) architecture for the memory cell.
4M-bits SRAM is a 262144words unsynchronous SRAM
fabricated by silicon-gate CMOS technology.
M6MGB/T162S4BVP is suitable for the application of the
mobile-communication-system to reduce both the mount
space and weight .
Access time
Flash Memory 90ns (Max.)
SRAM 85ns (Max.)
Supply voltage Vcc=2.7 ~ 3.6V
Ambient temperature
W version Ta=-20 ~ 85
°
C
Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch
APPLICATION
Mobile communication products
FEATURES
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14.0 mm
PIN CONFIGURATION (TOP VIEW)
F-VCC
S-VCC
:Vcc for Flash
:Vcc for SRAM
GND
S-A-1
A0-A17
:GND for Flash SRAM
:Address for SRAM
:Data I/O
A18-A19
DQ0-DQ15
F-CE#
S-CE
OE#
:Flash Chip Enable
:SRAM Chip Enable
:Flash/SRAM Output Enable
WE#
F-WP#
F-RP#
F-RY/BY#
:Flash/SRAM Write Enable
:Flash Write Protect
:Flash Reset Power Down
:Flash Ready /Busy
NC:Non Connection
1
A16
DQ15
A0
OE#
F-CE#
DQ0
DQ1
DQ9
DQ11
GND
S-A-1
DQ10
F-VCC
DQ12
DQ13
DQ14
A18
A17
A7
A6
A5
A4
A3
F-S-VCC
A10
A9
A8
A19
S-CE
A15
A14
A13
A11
F-RP#
F-WP#
A1
A2
WE#
:Address for Flash
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