參數(shù)資料
型號(hào)： M6MGB160S4BVP
廠商： Mitsubishi Electric Corporation
英文描述： CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
中文描述： 3.3的CMOS只快閃記憶體
文件頁數(shù)： 16/30頁
文件大?。?/td> 257K
代理商： M6MGB160S4BVP
MITSUBISHI LSIs
Sep. 1999 , Rev.2.0
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T160S4BVP
16
AC WAVEFORMS FOR BYTE / WORD PROGRAM OPERATION (WE# control) (to only BANK(I))
WRITE READ
ARRAY COMMAND
READ STATUS
REGISTER
V
IH
V
IL
ADDR
ADDRESS
VALID
t
AS
PROGRAM
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
F-CE#
OE#
WE#
DATA
F-RY/BY#
V
IL
V
IH
V
IL
V
IH
V
IL
F-RP#
V
IH
V
IL
F-WP#
V
IL
40H
DIN
t
CS
t
CH
t
WPH
t
WP
t
DS
t
PS
t
DAP
t
WHRL
t
OEH
t
a(CE)
t
a(OE)
t
BLH
t
DH
SRD
FFH
t
AH
t
WC
t
BLS
BANK(I) ADDRESS VALID
BAN VALID
V
IH
BYTE#
V
IL
t
BH
t
BS
AC WAVEFORMS FOR BYTE / WORD PROGRAM OPERATION (F-CE# control) (to only BANK(I))
WRITE READ
ARRAY COMMAND
READ STATUS
REGISTER
V
IH
V
IL
A
DDR
ADDRESS
VALID
t
AS
PROGRAM
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
F-CE#
OE#
WE#
DATA
F-RY/BY#
V
IL
V
IH
V
IL
V
IH
V
IL
F-RP#
V
IH
V
IL
V
IL
40H
DIN
t
WS
t
WH
t
CEP
t
DS
t
DAP
t
EHRL
t
OEH
t
a(CE)
t
a(OE)
t
BLH
t
DH
SRD
FFH
t
AH
t
WC
t
BLS
BANK(I) ADDRESS VALID
F-WP#
BAN VALID
V
IH
BYTE#
V
IL
t
PS
t
BH
t
BS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M6MGB162S2BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB162S4BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
M6MGB166S2BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB331S4BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
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